Water-related degradation of contacts in the multilevel MOS IC with spin-on glasses as interlevel dielectrics

Water-related degradation of contacts in the multilevel MOS IC with spin-on glasses as interlevel dielectrics

The effect of using silicon-dioxide-based spin-on glasses as interlevel dielectrics in multilevel silicon integrated circuits is discussed. It was found that water in the spin-on glass leads to an open-circuit failure of contacts in small windows due to the outgassing of water during aluminum deposi...

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Veröffentlicht in:IEEE electron device letters 1989-12, Vol.10 (12), p.562-564
Hauptverfasser: Lifshitz, N., Lai, W.Y.C., Smolinsky, G.
Format: Artikel
Sprache:eng
Schlagworte:
Aluminum
Annealing
Applied sciences
Circuits
Conducting materials
Degradation
Design. Technologies. Operation analysis. Testing
Dielectric materials
Dielectric substrates
Electronics
Exact sciences and technology
Glass
Integrated circuits
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicon
Voltage
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Zusammenfassung:The effect of using silicon-dioxide-based spin-on glasses as interlevel dielectrics in multilevel silicon integrated circuits is discussed. It was found that water in the spin-on glass leads to an open-circuit failure of contacts in small windows due to the outgassing of water during aluminum deposition. Although a 450 degrees C anneal can markedly improve the quality of the contacts, the process remains unreliable for manufacturing.< >
ISSN:0741-3106
1558-0563
DOI:10.1109/55.43140