The guard-ring termination for the high-voltage SiC Schottky barrier diodes
In this report, we propose the guard-ring structure as the edge termination for the high-voltage SiC Schottky barrier diodes. The local oxidation process is used to form the mesa of a p-n junction as the guard-ring. The comparison between the Al/Ti Schottky barrier diodes with and without the guard-...
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| Veröffentlicht in: | IEEE electron device letters 1995-07, Vol.16 (7), p.331-332 |
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| container_end_page | 332 |
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| container_title | IEEE electron device letters |
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| creator | Ueno, K. Urushidani, T. Hashimoto, K. Seki, Y. |
| description | In this report, we propose the guard-ring structure as the edge termination for the high-voltage SiC Schottky barrier diodes. The local oxidation process is used to form the mesa of a p-n junction as the guard-ring. The comparison between the Al/Ti Schottky barrier diodes with and without the guard-ring indicates the effectiveness of the guard-ring to relax the electric field, from the results that the breakdown voltage is about two times larger with high yield.< > |
| doi_str_mv | 10.1109/55.388724 |
| format | Article |
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The local oxidation process is used to form the mesa of a p-n junction as the guard-ring. The comparison between the Al/Ti Schottky barrier diodes with and without the guard-ring indicates the effectiveness of the guard-ring to relax the electric field, from the results that the breakdown voltage is about two times larger with high yield.< ></description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/55.388724</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Annealing ; Applied sciences ; Chemical vapor deposition ; Diodes ; Electric resistance ; Electronics ; Exact sciences and technology ; Fabrication ; Oxidation ; P-n junctions ; Schottky barriers ; Schottky diodes ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Silicon carbide ; Switching loss</subject><ispartof>IEEE electron device letters, 1995-07, Vol.16 (7), p.331-332</ispartof><rights>1995 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c403t-defa316bd3e29449f563662b88dccfd62279190d545a9d8c32c8a2ade486d2363</citedby><cites>FETCH-LOGICAL-c403t-defa316bd3e29449f563662b88dccfd62279190d545a9d8c32c8a2ade486d2363</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/388724$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/388724$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=3578199$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Ueno, K.</creatorcontrib><creatorcontrib>Urushidani, T.</creatorcontrib><creatorcontrib>Hashimoto, K.</creatorcontrib><creatorcontrib>Seki, Y.</creatorcontrib><title>The guard-ring termination for the high-voltage SiC Schottky barrier diodes</title><title>IEEE electron device letters</title><addtitle>LED</addtitle><description>In this report, we propose the guard-ring structure as the edge termination for the high-voltage SiC Schottky barrier diodes. The local oxidation process is used to form the mesa of a p-n junction as the guard-ring. The comparison between the Al/Ti Schottky barrier diodes with and without the guard-ring indicates the effectiveness of the guard-ring to relax the electric field, from the results that the breakdown voltage is about two times larger with high yield.< ></description><subject>Annealing</subject><subject>Applied sciences</subject><subject>Chemical vapor deposition</subject><subject>Diodes</subject><subject>Electric resistance</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Fabrication</subject><subject>Oxidation</subject><subject>P-n junctions</subject><subject>Schottky barriers</subject><subject>Schottky diodes</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Silicon carbide</subject><subject>Switching loss</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1995</creationdate><recordtype>article</recordtype><recordid>eNqNkDtPwzAUhS0EEqUwsDJ5QEgMKX7HHlHFS1RiaJkj13ZSQxoX20XqvydVKliZ7nC-8-nqAHCJ0QRjpO44n1ApS8KOwAhzLgvEBT0GI1QyXFCMxCk4S-kDIcxYyUbgdbFysNnqaIvouwZmF9e-09mHDtYhwtzHK9-siu_QZt04OPdTODerkPPnDi51jN5FaH2wLp2Dk1q3yV0c7hi8Pz4sps_F7O3pZXo_KwxDNBfW1ZpisbTUEcWYqvsPhSBLKa0xtRWElAorZDnjWllpKDFSE20dk8ISKugY3AzeTQxfW5dytfbJuLbVnQvbVBEpBab8P6AoseSqB28H0MSQUnR1tYl-reOuwqja71pxXg279uz1QaqT0W0ddWd8-i1QXkqs9sqrAfPOub90cPwAvt9-tQ</recordid><startdate>19950701</startdate><enddate>19950701</enddate><creator>Ueno, K.</creator><creator>Urushidani, T.</creator><creator>Hashimoto, K.</creator><creator>Seki, Y.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>7QF</scope><scope>7QQ</scope><scope>8BQ</scope><scope>JG9</scope></search><sort><creationdate>19950701</creationdate><title>The guard-ring termination for the high-voltage SiC Schottky barrier diodes</title><author>Ueno, K. ; Urushidani, T. ; Hashimoto, K. ; Seki, Y.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c403t-defa316bd3e29449f563662b88dccfd62279190d545a9d8c32c8a2ade486d2363</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1995</creationdate><topic>Annealing</topic><topic>Applied sciences</topic><topic>Chemical vapor deposition</topic><topic>Diodes</topic><topic>Electric resistance</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Fabrication</topic><topic>Oxidation</topic><topic>P-n junctions</topic><topic>Schottky barriers</topic><topic>Schottky diodes</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Silicon carbide</topic><topic>Switching loss</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Ueno, K.</creatorcontrib><creatorcontrib>Urushidani, T.</creatorcontrib><creatorcontrib>Hashimoto, K.</creatorcontrib><creatorcontrib>Seki, Y.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Aluminium Industry Abstracts</collection><collection>Ceramic Abstracts</collection><collection>METADEX</collection><collection>Materials Research Database</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Ueno, K.</au><au>Urushidani, T.</au><au>Hashimoto, K.</au><au>Seki, Y.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>The guard-ring termination for the high-voltage SiC Schottky barrier diodes</atitle><jtitle>IEEE electron device letters</jtitle><stitle>LED</stitle><date>1995-07-01</date><risdate>1995</risdate><volume>16</volume><issue>7</issue><spage>331</spage><epage>332</epage><pages>331-332</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><coden>EDLEDZ</coden><abstract>In this report, we propose the guard-ring structure as the edge termination for the high-voltage SiC Schottky barrier diodes. The local oxidation process is used to form the mesa of a p-n junction as the guard-ring. The comparison between the Al/Ti Schottky barrier diodes with and without the guard-ring indicates the effectiveness of the guard-ring to relax the electric field, from the results that the breakdown voltage is about two times larger with high yield.< ></abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/55.388724</doi><tpages>2</tpages></addata></record> |
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| identifier | ISSN: 0741-3106 |
| ispartof | IEEE electron device letters, 1995-07, Vol.16 (7), p.331-332 |
| issn | 0741-3106 1558-0563 |
| language | eng |
| recordid | cdi_crossref_primary_10_1109_55_388724 |
| source | IEEE Electronic Library (IEL) |
| subjects | Annealing Applied sciences Chemical vapor deposition Diodes Electric resistance Electronics Exact sciences and technology Fabrication Oxidation P-n junctions Schottky barriers Schottky diodes Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon carbide Switching loss |
| title | The guard-ring termination for the high-voltage SiC Schottky barrier diodes |
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