The guard-ring termination for the high-voltage SiC Schottky barrier diodes

The guard-ring termination for the high-voltage SiC Schottky barrier diodes

In this report, we propose the guard-ring structure as the edge termination for the high-voltage SiC Schottky barrier diodes. The local oxidation process is used to form the mesa of a p-n junction as the guard-ring. The comparison between the Al/Ti Schottky barrier diodes with and without the guard-...

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Veröffentlicht in:IEEE electron device letters 1995-07, Vol.16 (7), p.331-332
Hauptverfasser: Ueno, K., Urushidani, T., Hashimoto, K., Seki, Y.
Format: Artikel
Sprache:eng
Schlagworte:
Annealing
Applied sciences
Chemical vapor deposition
Diodes
Electric resistance
Electronics
Exact sciences and technology
Fabrication
Oxidation
P-n junctions
Schottky barriers
Schottky diodes
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicon carbide
Switching loss
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Zusammenfassung:In this report, we propose the guard-ring structure as the edge termination for the high-voltage SiC Schottky barrier diodes. The local oxidation process is used to form the mesa of a p-n junction as the guard-ring. The comparison between the Al/Ti Schottky barrier diodes with and without the guard-ring indicates the effectiveness of the guard-ring to relax the electric field, from the results that the breakdown voltage is about two times larger with high yield.< >
ISSN:0741-3106
1558-0563
DOI:10.1109/55.388724