Measurement of I-V curves of silicon-on-insulator (SOI) MOSFET's without self-heating

A new method for measuring the output (I/sub D/-V/sub D/) characteristics of SOI MOSFET's without self-heating is described. The method uses short pulses with a low repetition rate, and a reverse transient loadline construction. The technique is demonstrated by measuring 0.25 μm bulk and SOI MO...

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Veröffentlicht in:	IEEE electron device letters 1995-04, Vol.16 (4), p.145-147
Hauptverfasser:	Jenkins, K.A., Sun, J.Y.-C.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Electronics Equivalent circuits Exact sciences and technology MOSFET circuits Oscilloscopes Power system transients Pulse generation Pulse measurements Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon on insulator technology Temperature measurement Time measurement Transistors Voltage measurement
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Beschreibung
Zusammenfassung:	A new method for measuring the output (I/sub D/-V/sub D/) characteristics of SOI MOSFET's without self-heating is described. The method uses short pulses with a low repetition rate, and a reverse transient loadline construction. The technique is demonstrated by measuring 0.25 μm bulk and SOI MOSFET's with 5-nm gate oxide. Application of the method to the extraction of device temperature as a function of DC power is also illustrated.
ISSN:	0741-3106 1558-0563
DOI:	10.1109/55.372496