High-performance emitter-up/down SiGe HBT's

The experimental results in this paper provide evidence of high-performance symmetric and emitter-down operation of SiGe-HBT's. SiGe-base transistors were fabricated by using Atmospheric-Pressure Chemical Vapor Deposition (APCVD) for the epitaxial growth of SiGe and Si layers, and a novel self-...

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Veröffentlicht in:	IEEE electron device letters 1994-09, Vol.15 (9), p.360-362
Hauptverfasser:	Burghartz, J.N., Jenkins, K.A., Grutzmacher, D.A., Sedgwick, T.O., Stanis, C.L.
Format:	Artikel
Sprache:	eng
Schlagworte:	Bipolar transistors Chemical vapor deposition Circuits Cutoff frequency Doping Epitaxial growth Fabrication Germanium silicon alloys Heterojunction bipolar transistors Silicon germanium
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Beschreibung
Zusammenfassung:	The experimental results in this paper provide evidence of high-performance symmetric and emitter-down operation of SiGe-HBT's. SiGe-base transistors were fabricated by using Atmospheric-Pressure Chemical Vapor Deposition (APCVD) for the epitaxial growth of SiGe and Si layers, and a novel self-aligned device structure. Current gains of 2000 and 120, cutoff-frequencies of 64 GHz and 14 GHz, and maximum oscillation frequencies of 23 GHz and 10 GHz have been achieved for emitter-up and emitter-down operation, respectively.< >
ISSN:	0741-3106 1558-0563
DOI:	10.1109/55.311134