Inverter performance of deep-submicrometer MOSFETs

Inverter performance of deep-submicrometer MOSFETs

Switching delay measurements are reported for self-aligned, almost fully scaled, liquid-nitrogen-temperature operation NMOS inverters with deep-submicrometer gate lengths. The shortest delay per stage of 13.1 ps was measured in 0.1- mu m gate-length circuits. Circuit simulations based on the measure...

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Veröffentlicht in:IEEE electron device letters 1988-12, Vol.9 (12), p.633-635
Hauptverfasser: Sai-Halasz, G.A., Wordeman, M.R., Kern, D.P., Rishton, S., Ganin, E., Ng, H.Y., Moy, D., Chang, T.H.P., Dennard, R.H.
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Circuits
Delay
Electronics
Exact sciences and technology
Fabrication
Integrated circuits
Inverters
Length measurement
MOSFETs
Pulse measurements
Ring oscillators
Semiconductor device measurement
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transconductance
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Zusammenfassung:Switching delay measurements are reported for self-aligned, almost fully scaled, liquid-nitrogen-temperature operation NMOS inverters with deep-submicrometer gate lengths. The shortest delay per stage of 13.1 ps was measured in 0.1- mu m gate-length circuits. Circuit simulations based on the measured device characteristics show that still shorter delay times can be reached with such a technology.< >
ISSN:0741-3106
1558-0563
DOI:10.1109/55.20419