Simple and accurate procedure for modeling erbium-doped waveguide amplifiers with high concentration
We present an accurate, fast, and easily implemented procedure for modeling erbium-doped waveguide amplifiers (EDWAs) with high concentration doping level. The model is shown to be in a very good agreement when compared with experimental results, and is used in a detailed analysis of a waveguide amp...
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| Veröffentlicht in: | Journal of lightwave technology 2000-03, Vol.18 (3), p.401-408 |
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| container_end_page | 408 |
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| container_issue | 3 |
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| container_title | Journal of lightwave technology |
| container_volume | 18 |
| creator | Vermelho, M.V.D. Peschel, U. Aitchison, S. |
| description | We present an accurate, fast, and easily implemented procedure for modeling erbium-doped waveguide amplifiers (EDWAs) with high concentration doping level. The model is shown to be in a very good agreement when compared with experimental results, and is used in a detailed analysis of a waveguide amplifier with 980-nm pumping. |
| doi_str_mv | 10.1109/50.827513 |
| format | Article |
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The model is shown to be in a very good agreement when compared with experimental results, and is used in a detailed analysis of a waveguide amplifier with 980-nm pumping.</description><identifier>ISSN: 0733-8724</identifier><identifier>EISSN: 1558-2213</identifier><identifier>DOI: 10.1109/50.827513</identifier><identifier>CODEN: JLTEDG</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Absorption ; Accuracy ; Amplifiers ; Applied sciences ; Circuit properties ; Doping ; Electric, optical and optoelectronic circuits ; Electronics ; Erbium ; Erbium-doped fiber amplifier ; Exact sciences and technology ; Integrated optoelectronics. Optoelectronic circuits ; Nonlinear optics ; Optical amplifiers ; Optical and optoelectronic circuits ; Optical pumping ; Optical waveguides ; Pumping ; Semiconductor optical amplifiers ; Spontaneous emission ; Stimulated emission ; Waveguides</subject><ispartof>Journal of lightwave technology, 2000-03, Vol.18 (3), p.401-408</ispartof><rights>2000 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2000</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c429t-d1b8df1257f672549a3a8a2b16606d7c282d24e1575bf42bca8e88b27728e0693</citedby><cites>FETCH-LOGICAL-c429t-d1b8df1257f672549a3a8a2b16606d7c282d24e1575bf42bca8e88b27728e0693</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/827513$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/827513$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=1306316$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Vermelho, M.V.D.</creatorcontrib><creatorcontrib>Peschel, U.</creatorcontrib><creatorcontrib>Aitchison, S.</creatorcontrib><title>Simple and accurate procedure for modeling erbium-doped waveguide amplifiers with high concentration</title><title>Journal of lightwave technology</title><addtitle>JLT</addtitle><description>We present an accurate, fast, and easily implemented procedure for modeling erbium-doped waveguide amplifiers (EDWAs) with high concentration doping level. The model is shown to be in a very good agreement when compared with experimental results, and is used in a detailed analysis of a waveguide amplifier with 980-nm pumping.</description><subject>Absorption</subject><subject>Accuracy</subject><subject>Amplifiers</subject><subject>Applied sciences</subject><subject>Circuit properties</subject><subject>Doping</subject><subject>Electric, optical and optoelectronic circuits</subject><subject>Electronics</subject><subject>Erbium</subject><subject>Erbium-doped fiber amplifier</subject><subject>Exact sciences and technology</subject><subject>Integrated optoelectronics. Optoelectronic circuits</subject><subject>Nonlinear optics</subject><subject>Optical amplifiers</subject><subject>Optical and optoelectronic circuits</subject><subject>Optical pumping</subject><subject>Optical waveguides</subject><subject>Pumping</subject><subject>Semiconductor optical amplifiers</subject><subject>Spontaneous emission</subject><subject>Stimulated emission</subject><subject>Waveguides</subject><issn>0733-8724</issn><issn>1558-2213</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2000</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNqF0U1v1DAQBuAIUYmlcODKyUKIj0OKPYnt8RFV5UOq1ANwjhx7susqiRc7oeLf16tdgcShnHzwM6_1eqrqheAXQnDzQfILBC1F86jaCCmxBhDN42rDddPUqKF9Uj3N-ZZz0baoN5X_Fqb9SMzOnlnn1mQXYvsUHfk1ERtiYlP0NIZ5yyj1YZ1qH_fk2Z39Rds1-DJaAsIQKGV2F5Yd24Xtjrk4O5qXEhfi_Kw6G-yY6fnpPK9-fLr6fvmlvr75_PXy43XtWjBL7UWPfhAg9aA0yNbYxqKFXijFldcOEDy0JKSW_dBC7ywSYg9aAxJXpjmv3h5zS4GfK-Wlm0J2NI52prjmzohWgRGIRb55UAJKaZRR_4flcQXYFvjuQSg4AKIR8kBf_UNv45rm8jMdouSlppEFvT8il2LOiYZun8Jk0--S1B1W3UneHVdd7OtToM3OjkOyswv570DDVSMOXV4eWSCiP7enjHvJ1q8w</recordid><startdate>20000301</startdate><enddate>20000301</enddate><creator>Vermelho, M.V.D.</creator><creator>Peschel, U.</creator><creator>Aitchison, S.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>RIA</scope><scope>RIE</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>20000301</creationdate><title>Simple and accurate procedure for modeling erbium-doped waveguide amplifiers with high concentration</title><author>Vermelho, M.V.D. ; Peschel, U. ; Aitchison, S.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c429t-d1b8df1257f672549a3a8a2b16606d7c282d24e1575bf42bca8e88b27728e0693</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2000</creationdate><topic>Absorption</topic><topic>Accuracy</topic><topic>Amplifiers</topic><topic>Applied sciences</topic><topic>Circuit properties</topic><topic>Doping</topic><topic>Electric, optical and optoelectronic circuits</topic><topic>Electronics</topic><topic>Erbium</topic><topic>Erbium-doped fiber amplifier</topic><topic>Exact sciences and technology</topic><topic>Integrated optoelectronics. Optoelectronic circuits</topic><topic>Nonlinear optics</topic><topic>Optical amplifiers</topic><topic>Optical and optoelectronic circuits</topic><topic>Optical pumping</topic><topic>Optical waveguides</topic><topic>Pumping</topic><topic>Semiconductor optical amplifiers</topic><topic>Spontaneous emission</topic><topic>Stimulated emission</topic><topic>Waveguides</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Vermelho, M.V.D.</creatorcontrib><creatorcontrib>Peschel, U.</creatorcontrib><creatorcontrib>Aitchison, S.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of lightwave technology</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Vermelho, M.V.D.</au><au>Peschel, U.</au><au>Aitchison, S.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Simple and accurate procedure for modeling erbium-doped waveguide amplifiers with high concentration</atitle><jtitle>Journal of lightwave technology</jtitle><stitle>JLT</stitle><date>2000-03-01</date><risdate>2000</risdate><volume>18</volume><issue>3</issue><spage>401</spage><epage>408</epage><pages>401-408</pages><issn>0733-8724</issn><eissn>1558-2213</eissn><coden>JLTEDG</coden><abstract>We present an accurate, fast, and easily implemented procedure for modeling erbium-doped waveguide amplifiers (EDWAs) with high concentration doping level. The model is shown to be in a very good agreement when compared with experimental results, and is used in a detailed analysis of a waveguide amplifier with 980-nm pumping.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/50.827513</doi><tpages>8</tpages></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 0733-8724 |
| ispartof | Journal of lightwave technology, 2000-03, Vol.18 (3), p.401-408 |
| issn | 0733-8724 1558-2213 |
| language | eng |
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| source | IEEE Electronic Library (IEL) |
| subjects | Absorption Accuracy Amplifiers Applied sciences Circuit properties Doping Electric, optical and optoelectronic circuits Electronics Erbium Erbium-doped fiber amplifier Exact sciences and technology Integrated optoelectronics. Optoelectronic circuits Nonlinear optics Optical amplifiers Optical and optoelectronic circuits Optical pumping Optical waveguides Pumping Semiconductor optical amplifiers Spontaneous emission Stimulated emission Waveguides |
| title | Simple and accurate procedure for modeling erbium-doped waveguide amplifiers with high concentration |
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