Simple and accurate procedure for modeling erbium-doped waveguide amplifiers with high concentration

We present an accurate, fast, and easily implemented procedure for modeling erbium-doped waveguide amplifiers (EDWAs) with high concentration doping level. The model is shown to be in a very good agreement when compared with experimental results, and is used in a detailed analysis of a waveguide amp...

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Veröffentlicht in:Journal of lightwave technology 2000-03, Vol.18 (3), p.401-408
Hauptverfasser: Vermelho, M.V.D., Peschel, U., Aitchison, S.
Format: Artikel
Sprache:eng
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Zusammenfassung:We present an accurate, fast, and easily implemented procedure for modeling erbium-doped waveguide amplifiers (EDWAs) with high concentration doping level. The model is shown to be in a very good agreement when compared with experimental results, and is used in a detailed analysis of a waveguide amplifier with 980-nm pumping.
ISSN:0733-8724
1558-2213
DOI:10.1109/50.827513