Simple and accurate procedure for modeling erbium-doped waveguide amplifiers with high concentration
We present an accurate, fast, and easily implemented procedure for modeling erbium-doped waveguide amplifiers (EDWAs) with high concentration doping level. The model is shown to be in a very good agreement when compared with experimental results, and is used in a detailed analysis of a waveguide amp...
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Veröffentlicht in: | Journal of lightwave technology 2000-03, Vol.18 (3), p.401-408 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | We present an accurate, fast, and easily implemented procedure for modeling erbium-doped waveguide amplifiers (EDWAs) with high concentration doping level. The model is shown to be in a very good agreement when compared with experimental results, and is used in a detailed analysis of a waveguide amplifier with 980-nm pumping. |
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ISSN: | 0733-8724 1558-2213 |
DOI: | 10.1109/50.827513 |