A method to determine the above-threshold stability of distributed feedback semiconductor laser diodes

A method to determine the above-threshold stability of distributed feedback semiconductor laser diodes

An analysis of the above-threshold stability of distributed feedback (DFB) semiconductor laser diodes (LD's) is presented. It is based on a numerical model which takes into account effects of spatial hole burning (SHB) and the nonlinear gain coefficient. In the analysis, the Newton-Raphson (NR)...

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Veröffentlicht in:Journal of lightwave technology 1995-04, Vol.13 (4), p.563-568
Hauptverfasser: Lo, S.K.B., Ghafouri-Shiraz, H.
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Charge carrier density
Diode lasers
Distributed feedback devices
Electronics
Exact sciences and technology
Laser feedback
Laser modes
Laser stability
Laser theory
Numerical models
Optoelectronic devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Semiconductor lasers
Stability analysis
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Zusammenfassung:An analysis of the above-threshold stability of distributed feedback (DFB) semiconductor laser diodes (LD's) is presented. It is based on a numerical model which takes into account effects of spatial hole burning (SHB) and the nonlinear gain coefficient. In the analysis, the Newton-Raphson (NR) technique has not been used, and no functional derivative is required. Taking into account the presence of another nonlasing mode, the single-mode stability of the DFB laser diodes is determined. The proposed model does not depend on any particular DFB structure, and hence can be applied to various DFB LD structures. Numerical results are presented for a three-phase-shift (3PS) DFB LD.< >
ISSN:0733-8724
1558-2213
DOI:10.1109/50.372466