Universal-V/sub dd/ 0.65-2.0-V 32-kB cache using a voltage-adapted timing-generation scheme and a lithographically symmetrical cell
A universal-V/sub dd/ 32-kB four-way-set-associative embedded cache has been developed. A test cache chip was fabricated by using 0.18-/spl mu/m enhanced CMOS technology, and it was found to continuously operate from 0.65 to 2.0 V. Its operating frequency and power are from 120 MHz and 1.7 mW at 0.6...
Gespeichert in:
Veröffentlicht in: | IEEE journal of solid-state circuits 2001-11, Vol.36 (11), p.1738-1744 |
---|---|
Hauptverfasser: | , , , , , , , , |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | A universal-V/sub dd/ 32-kB four-way-set-associative embedded cache has been developed. A test cache chip was fabricated by using 0.18-/spl mu/m enhanced CMOS technology, and it was found to continuously operate from 0.65 to 2.0 V. Its operating frequency and power are from 120 MHz and 1.7 mW at 0.65 V to 1.04 GHz and 530 mW at 2.0 V. The cache is based on two new circuit techniques: a voltage-adapted timing-generation scheme with plural dummy cells for the wider voltage-range operation, and use of a lithographically symmetrical cell for lower voltage operation. |
---|---|
ISSN: | 0018-9200 1558-173X |
DOI: | 10.1109/4.962296 |