33-GHz monolithic cascode AlInAs/GaInAs heterojunction bipolar transistor feedback amplifier

33-GHz monolithic cascode AlInAs/GaInAs heterojunction bipolar transistor feedback amplifier

Microwave cascode feedback amplifiers with 8.6-dB gain and DC to 33-GHz bandwidth were developed. The amplifiers utilize AlIn-As/GaInAs heterojunction bipolar transistors having f/sub max/=70 GHz and f/sub tau /=90 GHz. Because of the significant collector-base feedback time constant the cascode con...

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Veröffentlicht in:IEEE journal of solid-state circuits 1991-10, Vol.26 (10), p.1378-1382
Hauptverfasser: Rodwell, M., Jensen, J.F., Stanchina, W.E., Metzger, R.A., Rensch, D.B., Pierce, M.W., Kargodorian, T.V., Allen, Y.K.
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Bandwidth
Bipolar transistors
Circuits
Costs
Doping
Electric, optical and optoelectronic circuits
Electronics
Exact sciences and technology
Feedback amplifiers
Gallium arsenide
Heterojunction bipolar transistors
Indium phosphide
Substrates
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Zusammenfassung:Microwave cascode feedback amplifiers with 8.6-dB gain and DC to 33-GHz bandwidth were developed. The amplifiers utilize AlIn-As/GaInAs heterojunction bipolar transistors having f/sub max/=70 GHz and f/sub tau /=90 GHz. Because of the significant collector-base feedback time constant the cascode configuration provides a large improvement in amplifier bandwidth, but a low-impedance bias node must be provided for the common-base transistor. An active bias network was thus used which eliminates the need for on-wafer Si/sub 3/N/sub 4/ bypass capacitors.< >
ISSN:0018-9200
1558-173X
DOI:10.1109/4.90089