A scaleable, statistical SPICE Gummel-Poon model for SiGe HBTs

A scaleable, statistical SPICE Gummel-Poon model for SiGe HBTs

A scaleable, statistical model has been developed for silicon germanium heterojunction transistors (SiGe HBTs), which are components of a commercially available BiCMOS technology for high-frequency applications. The SPICE Gummel-Poon (SGP) model parameters are scaled, and statistics added, using lan...

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Veröffentlicht in:IEEE journal of solid-state circuits 1998-09, Vol.33 (9), p.1439-1444
Hauptverfasser: Walter, K.M., Ebersman, B., Sunderland, D.A., Berg, G.D., Freeman, G.G., Groves, R.A., Jadus, D.K., Harame, D.L.
Format: Artikel
Sprache:eng
Schlagworte:
Bipolar transistors
Circuit simulation
Current density
Equations
Germanium silicon alloys
Heterojunction bipolar transistors
Microelectronics
Silicon germanium
SPICE
Statistical distributions
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Beschreibung
Zusammenfassung:A scaleable, statistical model has been developed for silicon germanium heterojunction transistors (SiGe HBTs), which are components of a commercially available BiCMOS technology for high-frequency applications. The SPICE Gummel-Poon (SGP) model parameters are scaled, and statistics added, using language features built into HSPICE, DC and AC fit is good over a wide range in emitter sizes, allowing an open-ended set of devices to be used with valid modeling capabilities. Features of IBM's HBT technology that contribute to the scaleability of the technology are discussed.
ISSN:0018-9200
1558-173X
DOI:10.1109/4.711345