A 1-GSample/s 10-b full Nyquist silicon bipolar Track&Hold IC

A 1-GSample/s 10-b full Nyquist silicon bipolar Track&Hold IC

This article gives a detailed presentation of an all-npn silicon bipolar Track&Hold IC for 10-b operation up to 1 GSample/s under full Nyquist conditions. Circuit techniques were implemented to reduce the pedestal, hold-mode feedthrough, and droop errors. An experimental Track&Hold IC was fa...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:IEEE journal of solid-state circuits 1997-12, Vol.32 (12), p.1951-1960
Hauptverfasser: Baumheinrich, T., Pregardier, B., Langmann, U.
Format: Artikel
Sprache:eng
Schlagworte:
Bandwidth
Bipolar integrated circuits
Distortion measurement
Frequency
Integrated circuit measurements
Linearity
Production
Silicon
Switches
Voltage
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:This article gives a detailed presentation of an all-npn silicon bipolar Track&Hold IC for 10-b operation up to 1 GSample/s under full Nyquist conditions. Circuit techniques were implemented to reduce the pedestal, hold-mode feedthrough, and droop errors. An experimental Track&Hold IC was fabricated in a 25-GHz-f/sub T/, 0.4-/spl mu/m-emitter-width single-poly base silicon bipolar production technology. Each of the Track&Hold circuits in this IC consists of 103 active devices and consumes 490 mW from a single supply voltage, including bandgap-references and input buffers.
ISSN:0018-9200
1558-173X
DOI:10.1109/4.643652