A dual 4-bit 2-Gs/s full Nyquist analog-to-digital converter using a 70-ps silicon bipolar technology with borosenic-poly process and coupling-base implant

A dual 4-b analog-to-digital converter (ADC) with Nyquist operation to 2 gigasamples/second (Gs/s) and -29-dBc distortion at 1 GHz is presented. A novel evaluation method using an integral digital-to-analog converter is introduced. A trench-isolated, self-aligned, double-polysilicon bipolar process...

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Veröffentlicht in:IEEE journal of solid-state circuits 1989-04, Vol.24 (2), p.216-222
Hauptverfasser: Garuts, V.E., Yu, Y.-C.S., Traa, E.O., Yamaguchi, T.
Format: Artikel
Sprache:eng
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Zusammenfassung:A dual 4-b analog-to-digital converter (ADC) with Nyquist operation to 2 gigasamples/second (Gs/s) and -29-dBc distortion at 1 GHz is presented. A novel evaluation method using an integral digital-to-analog converter is introduced. A trench-isolated, self-aligned, double-polysilicon bipolar process is used for the chip fabrication. This ADC has a resolution of 3.73 effective bits at 1-GHz analog input signal, without the use of a preceding sample-and-hold. Low-frequency untrimmed distortion is -48 dBc (not including quantizing error), and is independent of the sample rate of 2 Gs/s.< >
ISSN:0018-9200
1558-173X
DOI:10.1109/4.18579