A dual 4-bit 2-Gs/s full Nyquist analog-to-digital converter using a 70-ps silicon bipolar technology with borosenic-poly process and coupling-base implant
A dual 4-b analog-to-digital converter (ADC) with Nyquist operation to 2 gigasamples/second (Gs/s) and -29-dBc distortion at 1 GHz is presented. A novel evaluation method using an integral digital-to-analog converter is introduced. A trench-isolated, self-aligned, double-polysilicon bipolar process...
Gespeichert in:
Veröffentlicht in: | IEEE journal of solid-state circuits 1989-04, Vol.24 (2), p.216-222 |
---|---|
Hauptverfasser: | , , , |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | A dual 4-b analog-to-digital converter (ADC) with Nyquist operation to 2 gigasamples/second (Gs/s) and -29-dBc distortion at 1 GHz is presented. A novel evaluation method using an integral digital-to-analog converter is introduced. A trench-isolated, self-aligned, double-polysilicon bipolar process is used for the chip fabrication. This ADC has a resolution of 3.73 effective bits at 1-GHz analog input signal, without the use of a preceding sample-and-hold. Low-frequency untrimmed distortion is -48 dBc (not including quantizing error), and is independent of the sample rate of 2 Gs/s.< > |
---|---|
ISSN: | 0018-9200 1558-173X |
DOI: | 10.1109/4.18579 |