Simulation of charge transfer in GaAs Cermet-Gate CCDs

Computer simulations of charge transport in GaAs cermet-gate CCDs are discussed. A finite difference scheme is used to simulate charge evolution between successive clock phases. Epi-grown and ion-implanted channels are considered. It is shown that charge transport and hence the transfer inefficiencies of these devices depend on the relative importance of the drift field and the self-induced field more than the diffusion contribution. The one-dimensional scheme used for the simulation of charge transfer is simple and computationally less intensive than a rigorous two-dimensional approach, but is qualitatively as effective.< >