Monolithically integrated MSM-transimpedance amplifier grown by MBE for 1.0-1.6 mu m operation

A report is presented on a fully integrated metal-semiconductor-metal (MSM) transimpedance amplifier photoreceiver based on lattice matched In/sub 0.53/Ga/sub 0.47/As-In/sub 0.52/Al/sub 0.48/As heterostructures grown by molecular beam epitaxy (MBE). The layers were deposited in a single growth run with the heterojunction-FET (HFET) layers overlaying the detector structures and fabricated using a simple, near planar process that does not require pregrowth substrate patterning or complex planarization schemes. The 1 mu m gate length HFET devices showed good pinch-off and a high f/sub t/ of 30 GHz indicating that the underlying detector layers do not degrade the high-frequency HFET device performance. Clean eye patterns at 2 Gbit/s have been achieved.< >