Spontaneous emission induced filamentation in flared amplifiers

We present a propagation model for the steady-state properties of InGaAs QW flared laser amplifiers. Included in this analysis are diffusion, diffraction, carrier induced antiguiding, current spreading, gain spatial hole burning, gain compression and spontaneous emission. By monitoring the progress...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:IEEE journal of quantum electronics 1996-05, Vol.32 (5), p.784-789
Hauptverfasser: Ramanujan, S., Winful, H.G.
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:We present a propagation model for the steady-state properties of InGaAs QW flared laser amplifiers. Included in this analysis are diffusion, diffraction, carrier induced antiguiding, current spreading, gain spatial hole burning, gain compression and spontaneous emission. By monitoring the progress of the field, as well as the carrier density, we show that spontaneous emission, coupled with gain spatial hole burning, can result in filamentation of the amplifier output. This mechanism is in addition to other phenomena such as thermal effects and reflective feedback which have been shown to cause filamentation.
ISSN:0018-9197
1558-1713
DOI:10.1109/3.493001