InGaAs-AlGaAs-GaAs strained-layer quantum-well heterostructure square ring lasers

InGaAs-AlGaAs-GaAs strained-layer quantum-well heterostructure square ring lasers

The processing and optical characteristics of an InGaAs-AlGaAs-GaAs strained-layer quantum-well heterostructure square ring laser (4 /spl mu/m width and 50-/spl mu/m/side length) with two output waveguides and two narrow physical gap couplers are described. The ridges and the total internal reflecti...

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Veröffentlicht in:IEEE journal of quantum electronics 1995-11, Vol.31 (11), p.1994-1997
Hauptverfasser: Han, H., Forbes, D.V., Coleman, J.J.
Format: Artikel
Sprache:eng
Schlagworte:
Couplers
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Laser modes
Laser theory
Lasers
Mirrors
Optical waveguides
Optics
Physics
Quantum well lasers
Quantum wells
Ring lasers
Semiconductor lasers
laser diodes
Waveguide discontinuities
Waveguide lasers
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Zusammenfassung:The processing and optical characteristics of an InGaAs-AlGaAs-GaAs strained-layer quantum-well heterostructure square ring laser (4 /spl mu/m width and 50-/spl mu/m/side length) with two output waveguides and two narrow physical gap couplers are described. The ridges and the total internal reflection (TIR) mirrors of the square ring lasers are fabricated by two photolithographic steps with a single SiO/sub 2/ mask and planarized with polyimide such that the TIR mirrors are etched through the active region while the ridge waveguides are not. Single longitudinal mode operation is observed with a side mode suppression ratio of 20 dB. Asymmetric characteristics of emission spectra from the two output waveguides demonstrates that the square ring lasers operate in traveling wave modes.< >
ISSN:0018-9197
1558-1713
DOI:10.1109/3.469280