The performances of (InAs)/sub 1//(GaAs)/sub 2/ short-period superlattice strained single-quantum-well laser on GaAs substrate

The performances of (InAs)/sub 1//(GaAs)/sub 2/ short-period superlattice strained single-quantum-well laser on GaAs substrate

We fabricated an (InAs)/sub 1//(GaAs)/sub 2/ short-period superlattice (SPS) strained quantum-well laser at 1.07 /spl mu/m by MOVPE. The SPS active layer has 10 periods of (InAs)/sub 1//(/sub G/aAs)/sub 2/ and an average mismatch of over 2.2%. In highly strained conditions the device showed a lasing...

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Veröffentlicht in:IEEE journal of quantum electronics 1994-04, Vol.30 (4), p.909-912
Hauptverfasser: Kurakake, H., Uchida, T., Kubota, S., Soda, H., Yamazaki, S.
Format: Artikel
Sprache:eng
Schlagworte:
Current measurement
Epitaxial growth
Epitaxial layers
Gain measurement
Gallium arsenide
Light emitting diodes
Quantum well lasers
Superlattices
Temperature
Wavelength measurement
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Zusammenfassung:We fabricated an (InAs)/sub 1//(GaAs)/sub 2/ short-period superlattice (SPS) strained quantum-well laser at 1.07 /spl mu/m by MOVPE. The SPS active layer has 10 periods of (InAs)/sub 1//(/sub G/aAs)/sub 2/ and an average mismatch of over 2.2%. In highly strained conditions the device showed a lasing wavelength of 1.07 /spl mu/m, a threshold of 130 A/cm/sup 2/, and a characteristic temperature T/sub 0/ of 175 K. We measured the gain characteristic by the Hakki and Paoli method at LED conditions and obtained a high differential gain of 2.0/spl times/10/sup -15/ cm/sup 2/ at the threshold current.< >
ISSN:0018-9197
1558-1713
DOI:10.1109/3.291361