Strained Ga/sub x/In/sub 1-x/P/(AlGa)/sub 0.5/In/sub 0.5/P heterostructures and quantum-well laser diodes

Strained Ga/sub x/In/sub 1-x/P/(AlGa)/sub 0.5/In/sub 0.5/P heterostructures and quantum-well laser diodes

The properties of (AlGa)/sub 0.5/In/sub 0.5/P, strained Ga/sub x/In/sub 1-x/P/(AlGa)/sub 0.5/In/sub 0.5/P heterostructures, and single quantum well (QW) laser diodes with Al/sub 0.5/In/sub 0.5/P cladding layers, prepared by low pressure organometallic vapor phase epitaxy, are described. The influenc...

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Veröffentlicht in:IEEE journal of quantum electronics 1994-02, Vol.30 (2), p.593-607
Hauptverfasser: Bour, D.P., Geels, R.S., Treat, D.W., Paoli, T.L., Ponce, F., Thornton, R.L., Krusor, B.S., Bringans, R.D., Welch, D.F.
Format: Artikel
Sprache:eng
Schlagworte:
Capacitive sensors
Diode lasers
Electrons
Epitaxial growth
Polarization
Spontaneous emission
Threshold current
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Zusammenfassung:The properties of (AlGa)/sub 0.5/In/sub 0.5/P, strained Ga/sub x/In/sub 1-x/P/(AlGa)/sub 0.5/In/sub 0.5/P heterostructures, and single quantum well (QW) laser diodes with Al/sub 0.5/In/sub 0.5/P cladding layers, prepared by low pressure organometallic vapor phase epitaxy, are described. The influence of biaxial strain upon the relative positions of the valence band edges are examined by analyzing the polarized spontaneous emission. Laser diodes with wavelength 620
ISSN:0018-9197
1558-1713
DOI:10.1109/3.283808