An improved stripe-cell SEGR hardened power MOSFET technology

An improved stripe-cell SEGR hardened power MOSFET technology

A new single-event gate rupture radiation-hardened power MOSFET is reported. It is based upon a well-established radiation-hardened technology described in 1996. The hexagonal cells used in prior work are replaced with a stripe-cell structure producing demonstrated performance improvements.

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Bibliographische Detailangaben
Veröffentlicht in:IEEE transactions on nuclear science 2001-12, Vol.48 (6), p.1872-1878
Hauptverfasser: Savage, M.W., Burton, D.I., Wheatley, C.F., Titus, J.L., Gillberg, J.E.
Format: Artikel
Sprache:eng
Schlagworte:
Cranes
Electrons
FETs
Gates
Hexagonal cells
Manufacturing
MOSFET circuits
MOSFETs
Nuclear power generation
Performance enhancement
Power MOSFET
Protons
Rupture
Space technology
Termination of employment
Topology
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Beschreibung
Zusammenfassung:A new single-event gate rupture radiation-hardened power MOSFET is reported. It is based upon a well-established radiation-hardened technology described in 1996. The hexagonal cells used in prior work are replaced with a stripe-cell structure producing demonstrated performance improvements.
ISSN:0018-9499
1558-1578
DOI:10.1109/23.983145