Tracking with heavily irradiated silicon detectors operated at cryogenic temperatures
In this work we show that a heavily irradiated double-sided silicon microstrip detector recovers its performance when operated at cryogenic temperatures. A DELPHI microstrip detector, irradiated to a fluence of /spl sim/4/spl times/10/sup 14/ p/cm/sup 2/, no longer operational at room temperature, c...
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| Veröffentlicht in: | IEEE Transactions on Nuclear Science 1999-06, Vol.46 (3), p.228-231 |
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| creator | Casagrande, L. Barnett, B.M. Bartalini, P. Bell, W.H. Borer, K. Bowcock, T. Buytaert, J. Chochula, P. Collins, P. Da Via, C. Dijkstra, H. Dormond, O. Esposito, A. Frei, R. Granata, V. Janos, S. Konorov, I. Lourenco, C. Niinikoski, T.O. Pagano, S. Palmieri, V.G. Parkes, C. Paul, S. Pretzl, K. Ruf, T. Ruggiero, G. Saladino, S. Schmitt, L. Smith, K. Sonderegger, P. Stavitski, I. Steele, D. Vitobello, F. |
| description | In this work we show that a heavily irradiated double-sided silicon microstrip detector recovers its performance when operated at cryogenic temperatures. A DELPHI microstrip detector, irradiated to a fluence of /spl sim/4/spl times/10/sup 14/ p/cm/sup 2/, no longer operational at room temperature, cannot be distinguished from a non-irradiated one when operated at T |
| doi_str_mv | 10.1109/23.775519 |
| format | Article |
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A DELPHI microstrip detector, irradiated to a fluence of /spl sim/4/spl times/10/sup 14/ p/cm/sup 2/, no longer operational at room temperature, cannot be distinguished from a non-irradiated one when operated at T<120 K. Besides confirming the previously observed 'Lazarus effect' in single diodes, these results establish, for the first time, the possibility of using standard silicon detectors for tracking applications in extremely demanding radiation environments.</description><identifier>ISSN: 0018-9499</identifier><identifier>EISSN: 1558-1578</identifier><identifier>DOI: 10.1109/23.775519</identifier><identifier>CODEN: IETNAE</identifier><language>eng</language><publisher>United States: IEEE</publisher><subject>AMBIENT TEMPERATURE ; Charge carrier processes ; Cryogenic temperature ; Cryogenics ; Delphi ; Detectors ; Diodes ; Electron traps ; INSTRUMENTATION, INCLUDING NUCLEAR AND PARTICLE DETECTORS ; Irradiation ; Leakage current ; Microstrip ; PASSIVATION ; PHYSICAL RADIATION EFFECTS ; Radiation detectors ; SI SEMICONDUCTOR DETECTORS ; Silicon ; Silicon radiation detectors ; Temperature ; TEMPERATURE RANGE 0000-0013 K ; TEMPERATURE RANGE 0013-0065 K ; TEMPERATURE RANGE 0065-0273 K ; Tracking ; USES ; Voltage</subject><ispartof>IEEE Transactions on Nuclear Science, 1999-06, Vol.46 (3), p.228-231</ispartof><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c405t-7152c655e991f077572ab339710612b8faafbdaedc44f77e0315164e947aa5bc3</citedby><cites>FETCH-LOGICAL-c405t-7152c655e991f077572ab339710612b8faafbdaedc44f77e0315164e947aa5bc3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/775519$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,881,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/775519$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttps://www.osti.gov/biblio/679560$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Casagrande, L.</creatorcontrib><creatorcontrib>Barnett, B.M.</creatorcontrib><creatorcontrib>Bartalini, P.</creatorcontrib><creatorcontrib>Bell, W.H.</creatorcontrib><creatorcontrib>Borer, K.</creatorcontrib><creatorcontrib>Bowcock, T.</creatorcontrib><creatorcontrib>Buytaert, J.</creatorcontrib><creatorcontrib>Chochula, P.</creatorcontrib><creatorcontrib>Collins, P.</creatorcontrib><creatorcontrib>Da Via, C.</creatorcontrib><creatorcontrib>Dijkstra, H.</creatorcontrib><creatorcontrib>Dormond, O.</creatorcontrib><creatorcontrib>Esposito, A.</creatorcontrib><creatorcontrib>Frei, R.</creatorcontrib><creatorcontrib>Granata, V.</creatorcontrib><creatorcontrib>Janos, S.</creatorcontrib><creatorcontrib>Konorov, I.</creatorcontrib><creatorcontrib>Lourenco, C.</creatorcontrib><creatorcontrib>Niinikoski, T.O.</creatorcontrib><creatorcontrib>Pagano, S.</creatorcontrib><creatorcontrib>Palmieri, V.G.</creatorcontrib><creatorcontrib>Parkes, C.</creatorcontrib><creatorcontrib>Paul, S.</creatorcontrib><creatorcontrib>Pretzl, K.</creatorcontrib><creatorcontrib>Ruf, T.</creatorcontrib><creatorcontrib>Ruggiero, G.</creatorcontrib><creatorcontrib>Saladino, S.</creatorcontrib><creatorcontrib>Schmitt, L.</creatorcontrib><creatorcontrib>Smith, K.</creatorcontrib><creatorcontrib>Sonderegger, P.</creatorcontrib><creatorcontrib>Stavitski, I.</creatorcontrib><creatorcontrib>Steele, D.</creatorcontrib><creatorcontrib>Vitobello, F.</creatorcontrib><title>Tracking with heavily irradiated silicon detectors operated at cryogenic temperatures</title><title>IEEE Transactions on Nuclear Science</title><addtitle>TNS</addtitle><description>In this work we show that a heavily irradiated double-sided silicon microstrip detector recovers its performance when operated at cryogenic temperatures. A DELPHI microstrip detector, irradiated to a fluence of /spl sim/4/spl times/10/sup 14/ p/cm/sup 2/, no longer operational at room temperature, cannot be distinguished from a non-irradiated one when operated at T<120 K. Besides confirming the previously observed 'Lazarus effect' in single diodes, these results establish, for the first time, the possibility of using standard silicon detectors for tracking applications in extremely demanding radiation environments.</description><subject>AMBIENT TEMPERATURE</subject><subject>Charge carrier processes</subject><subject>Cryogenic temperature</subject><subject>Cryogenics</subject><subject>Delphi</subject><subject>Detectors</subject><subject>Diodes</subject><subject>Electron traps</subject><subject>INSTRUMENTATION, INCLUDING NUCLEAR AND PARTICLE DETECTORS</subject><subject>Irradiation</subject><subject>Leakage current</subject><subject>Microstrip</subject><subject>PASSIVATION</subject><subject>PHYSICAL RADIATION EFFECTS</subject><subject>Radiation detectors</subject><subject>SI SEMICONDUCTOR DETECTORS</subject><subject>Silicon</subject><subject>Silicon radiation detectors</subject><subject>Temperature</subject><subject>TEMPERATURE RANGE 0000-0013 K</subject><subject>TEMPERATURE RANGE 0013-0065 K</subject><subject>TEMPERATURE RANGE 0065-0273 K</subject><subject>Tracking</subject><subject>USES</subject><subject>Voltage</subject><issn>0018-9499</issn><issn>1558-1578</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1999</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNp90T1PwzAQBmALgUQpDKxMZgExpNiJHccjqviSKrG0s-U4l9aQxsV2Qf33mKZiZLLO9-julQ6hS0omlBJ5nxcTITin8giNKOdVRrmojtGIEFplkkl5is5CeE8l44SP0GLutfmw_RJ_27jCK9Bfttth671urI7Q4GA7a1yPG4hgovMBuw34fUtHbPzOLaG3BkdY7_-3HsI5Oml1F-Di8I7R4ulxPn3JZm_Pr9OHWWYY4TETlOem5BykpC1JuUWu66KQgpKS5nXVat3WjYbGMNYKAaSgnJYMJBNa89oUY3Q9zHUhWhWMTRFXKWyfkqpSSF6SZG4Hs_HucwshqrUNBrpO9-C2QUmatpdVkSd586_Mq5IzUfIE7wZovAvBQ6s23q613ylK1O8ZVF6o4QzJXg3WAsCfOzR_AChGgsE</recordid><startdate>19990601</startdate><enddate>19990601</enddate><creator>Casagrande, L.</creator><creator>Barnett, B.M.</creator><creator>Bartalini, P.</creator><creator>Bell, 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Technologies Database with Aerospace</collection><collection>Electronics & Communications Abstracts</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>OSTI.GOV</collection><jtitle>IEEE Transactions on Nuclear Science</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Casagrande, L.</au><au>Barnett, B.M.</au><au>Bartalini, P.</au><au>Bell, W.H.</au><au>Borer, K.</au><au>Bowcock, T.</au><au>Buytaert, J.</au><au>Chochula, P.</au><au>Collins, P.</au><au>Da Via, C.</au><au>Dijkstra, H.</au><au>Dormond, O.</au><au>Esposito, A.</au><au>Frei, R.</au><au>Granata, V.</au><au>Janos, S.</au><au>Konorov, I.</au><au>Lourenco, C.</au><au>Niinikoski, T.O.</au><au>Pagano, S.</au><au>Palmieri, V.G.</au><au>Parkes, C.</au><au>Paul, S.</au><au>Pretzl, K.</au><au>Ruf, T.</au><au>Ruggiero, G.</au><au>Saladino, S.</au><au>Schmitt, L.</au><au>Smith, K.</au><au>Sonderegger, P.</au><au>Stavitski, I.</au><au>Steele, D.</au><au>Vitobello, F.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Tracking with heavily irradiated silicon detectors operated at cryogenic temperatures</atitle><jtitle>IEEE Transactions on Nuclear Science</jtitle><stitle>TNS</stitle><date>1999-06-01</date><risdate>1999</risdate><volume>46</volume><issue>3</issue><spage>228</spage><epage>231</epage><pages>228-231</pages><issn>0018-9499</issn><eissn>1558-1578</eissn><coden>IETNAE</coden><abstract>In this work we show that a heavily irradiated double-sided silicon microstrip detector recovers its performance when operated at cryogenic temperatures. A DELPHI microstrip detector, irradiated to a fluence of /spl sim/4/spl times/10/sup 14/ p/cm/sup 2/, no longer operational at room temperature, cannot be distinguished from a non-irradiated one when operated at T<120 K. Besides confirming the previously observed 'Lazarus effect' in single diodes, these results establish, for the first time, the possibility of using standard silicon detectors for tracking applications in extremely demanding radiation environments.</abstract><cop>United States</cop><pub>IEEE</pub><doi>10.1109/23.775519</doi><tpages>4</tpages><oa>free_for_read</oa></addata></record> |
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| identifier | ISSN: 0018-9499 |
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| source | IEEE Electronic Library (IEL) |
| subjects | AMBIENT TEMPERATURE Charge carrier processes Cryogenic temperature Cryogenics Delphi Detectors Diodes Electron traps INSTRUMENTATION, INCLUDING NUCLEAR AND PARTICLE DETECTORS Irradiation Leakage current Microstrip PASSIVATION PHYSICAL RADIATION EFFECTS Radiation detectors SI SEMICONDUCTOR DETECTORS Silicon Silicon radiation detectors Temperature TEMPERATURE RANGE 0000-0013 K TEMPERATURE RANGE 0013-0065 K TEMPERATURE RANGE 0065-0273 K Tracking USES Voltage |
| title | Tracking with heavily irradiated silicon detectors operated at cryogenic temperatures |
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