Tracking with heavily irradiated silicon detectors operated at cryogenic temperatures

In this work we show that a heavily irradiated double-sided silicon microstrip detector recovers its performance when operated at cryogenic temperatures. A DELPHI microstrip detector, irradiated to a fluence of /spl sim/4/spl times/10/sup 14/ p/cm/sup 2/, no longer operational at room temperature, c...

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Veröffentlicht in:	IEEE Transactions on Nuclear Science 1999-06, Vol.46 (3), p.228-231
Hauptverfasser:	Casagrande, L., Barnett, B.M., Bartalini, P., Bell, W.H., Borer, K., Bowcock, T., Buytaert, J., Chochula, P., Collins, P., Da Via, C., Dijkstra, H., Dormond, O., Esposito, A., Frei, R., Granata, V., Janos, S., Konorov, I., Lourenco, C., Niinikoski, T.O., Pagano, S., Palmieri, V.G., Parkes, C., Paul, S., Pretzl, K., Ruf, T., Ruggiero, G., Saladino, S., Schmitt, L., Smith, K., Sonderegger, P., Stavitski, I., Steele, D., Vitobello, F.
Format:	Artikel
Sprache:	eng
Schlagworte:	AMBIENT TEMPERATURE Charge carrier processes Cryogenic temperature Cryogenics Delphi Detectors Diodes Electron traps INSTRUMENTATION, INCLUDING NUCLEAR AND PARTICLE DETECTORS Irradiation Leakage current Microstrip PASSIVATION PHYSICAL RADIATION EFFECTS Radiation detectors SI SEMICONDUCTOR DETECTORS Silicon Silicon radiation detectors Temperature TEMPERATURE RANGE 0000-0013 K TEMPERATURE RANGE 0013-0065 K TEMPERATURE RANGE 0065-0273 K Tracking USES Voltage
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Beschreibung
Zusammenfassung:	In this work we show that a heavily irradiated double-sided silicon microstrip detector recovers its performance when operated at cryogenic temperatures. A DELPHI microstrip detector, irradiated to a fluence of /spl sim/4/spl times/10/sup 14/ p/cm/sup 2/, no longer operational at room temperature, cannot be distinguished from a non-irradiated one when operated at T
ISSN:	0018-9499 1558-1578
DOI:	10.1109/23.775519