One-sided imaging of large, dense objects using 511-keV photons from induced-pair production
This work investigates the use of annihilation photons from gamma-ray-induced electron-positron pair production to inspect objects when only one side is accessible. The Z/sup 2/-dependence of the pair-production cross section and the high penetration of 511-keV photons allow this method to different...
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Veröffentlicht in: | IEEE Transactions on Nuclear Science 1998-06, Vol.45 (3), p.970-975 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | This work investigates the use of annihilation photons from gamma-ray-induced electron-positron pair production to inspect objects when only one side is accessible. The Z/sup 2/-dependence of the pair-production cross section and the high penetration of 511-keV photons allow this method to differentiate high-Z materials in low-Z matrices. The experimental results for the dependence of the backstreaming photon yield on Z shows a factor of 20 increase for elements over the range 4 |
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ISSN: | 0018-9499 1558-1578 |
DOI: | 10.1109/23.682689 |