One-sided imaging of large, dense objects using 511-keV photons from induced-pair production

This work investigates the use of annihilation photons from gamma-ray-induced electron-positron pair production to inspect objects when only one side is accessible. The Z/sup 2/-dependence of the pair-production cross section and the high penetration of 511-keV photons allow this method to different...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:IEEE Transactions on Nuclear Science 1998-06, Vol.45 (3), p.970-975
Hauptverfasser: Tavora, L.M.N., Morgado, R.E., Estep, R.J., Rawool-Sullivan, M., Gilboy, W.B., Morton, E.J.
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:This work investigates the use of annihilation photons from gamma-ray-induced electron-positron pair production to inspect objects when only one side is accessible. The Z/sup 2/-dependence of the pair-production cross section and the high penetration of 511-keV photons allow this method to differentiate high-Z materials in low-Z matrices. The experimental results for the dependence of the backstreaming photon yield on Z shows a factor of 20 increase for elements over the range 4
ISSN:0018-9499
1558-1578
DOI:10.1109/23.682689