The use of conversion model for CMOS IC prediction in space environments
A physical model for total dose sensitive MOSFET parameters suitable for extrapolation of laboratory test results to the results expected in space environments is developed. With respect to models based on linear response theory it provides the expansion of properly described time and dose-rate rang...
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| Veröffentlicht in: | IEEE Transactions on Nuclear Science 1996-12, Vol.43 (6), p.3182-3188 |
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| container_end_page | 3188 |
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| container_issue | 6 |
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| container_title | IEEE Transactions on Nuclear Science |
| container_volume | 43 |
| creator | Shvetzov-Shilovsky, I.N. Belyakov, V.V. Cherepko, S.V. Chumakov, A.I. Emelyanov, V.V. Pershenkov, V.S. Popov, M.Y. Zebrev, G.I. |
| description | A physical model for total dose sensitive MOSFET parameters suitable for extrapolation of laboratory test results to the results expected in space environments is developed. With respect to models based on linear response theory it provides the expansion of properly described time and dose-rate ranges. This model can be shown to be a linear function of one specially built variable thus providing robust parameter fitting and precise extrapolation. The model is used for MOSFET prediction in low dose-rate irradiation environments. |
| doi_str_mv | 10.1109/23.556923 |
| format | Article |
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With respect to models based on linear response theory it provides the expansion of properly described time and dose-rate ranges. This model can be shown to be a linear function of one specially built variable thus providing robust parameter fitting and precise extrapolation. The model is used for MOSFET prediction in low dose-rate irradiation environments.</description><identifier>ISSN: 0018-9499</identifier><identifier>EISSN: 1558-1578</identifier><identifier>DOI: 10.1109/23.556923</identifier><identifier>CODEN: IETNAE</identifier><language>eng</language><publisher>United States: IEEE</publisher><subject>Annealing ; Circuit testing ; CMOS integrated circuits ; Equations ; Extrapolation ; INSTRUMENTATION, INCLUDING NUCLEAR AND PARTICLE DETECTORS ; Integrated circuit modeling ; MATHEMATICAL MODELS ; MOSFET ; MOSFET circuits ; PHYSICAL RADIATION EFFECTS ; Predictive models ; RADIATION DOSES ; Semiconductor device modeling ; SENSITIVITY ; SPACE FLIGHT ; Tunneling</subject><ispartof>IEEE Transactions on Nuclear Science, 1996-12, Vol.43 (6), p.3182-3188</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c235t-81b0b7bef2472fb4e0c070338ac00f0a83c1e588697ae6c3a1c4ad9d3fae002f3</citedby><cites>FETCH-LOGICAL-c235t-81b0b7bef2472fb4e0c070338ac00f0a83c1e588697ae6c3a1c4ad9d3fae002f3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/556923$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,881,27903,27904,54737</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/556923$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttps://www.osti.gov/biblio/445494$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Shvetzov-Shilovsky, I.N.</creatorcontrib><creatorcontrib>Belyakov, V.V.</creatorcontrib><creatorcontrib>Cherepko, S.V.</creatorcontrib><creatorcontrib>Chumakov, A.I.</creatorcontrib><creatorcontrib>Emelyanov, V.V.</creatorcontrib><creatorcontrib>Pershenkov, V.S.</creatorcontrib><creatorcontrib>Popov, M.Y.</creatorcontrib><creatorcontrib>Zebrev, G.I.</creatorcontrib><title>The use of conversion model for CMOS IC prediction in space environments</title><title>IEEE Transactions on Nuclear Science</title><addtitle>TNS</addtitle><description>A physical model for total dose sensitive MOSFET parameters suitable for extrapolation of laboratory test results to the results expected in space environments is developed. With respect to models based on linear response theory it provides the expansion of properly described time and dose-rate ranges. This model can be shown to be a linear function of one specially built variable thus providing robust parameter fitting and precise extrapolation. The model is used for MOSFET prediction in low dose-rate irradiation environments.</description><subject>Annealing</subject><subject>Circuit testing</subject><subject>CMOS integrated circuits</subject><subject>Equations</subject><subject>Extrapolation</subject><subject>INSTRUMENTATION, INCLUDING NUCLEAR AND PARTICLE DETECTORS</subject><subject>Integrated circuit modeling</subject><subject>MATHEMATICAL MODELS</subject><subject>MOSFET</subject><subject>MOSFET circuits</subject><subject>PHYSICAL RADIATION EFFECTS</subject><subject>Predictive models</subject><subject>RADIATION DOSES</subject><subject>Semiconductor device modeling</subject><subject>SENSITIVITY</subject><subject>SPACE FLIGHT</subject><subject>Tunneling</subject><issn>0018-9499</issn><issn>1558-1578</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1996</creationdate><recordtype>article</recordtype><recordid>eNo90EFLAzEQBeAgCtbqwauneBE8bJ1skm5ylKK2UOnBeg5pdkIj201NtgX_vStbPA3D-xiGR8gtgwljoJ9KPpFyqkt-RkZMSlUwWalzMgJgqtBC60tylfNXvwoJckTm6y3SQ0YaPXWxPWLKIbZ0F2tsqI-Jzt5XH3Qxo_uEdXDdXxhamvfWIcX2GFJsd9h2-ZpceNtkvDnNMfl8fVnP5sVy9baYPS8LV3LZFYptYFNt0JeiKv1GIDiogHNlHYAHq7hjKJWa6sri1HHLnLC1rrm3CFB6Pib3w92Yu2CyCx26bf95i64zQkihRW8eBrNP8fuAuTO7kB02jW0xHrIpVQUa1LSHjwN0Keac0Jt9CjubfgwD89enKbkZ-uzt3WADIv67U_gL8eFvCw</recordid><startdate>199612</startdate><enddate>199612</enddate><creator>Shvetzov-Shilovsky, I.N.</creator><creator>Belyakov, V.V.</creator><creator>Cherepko, S.V.</creator><creator>Chumakov, A.I.</creator><creator>Emelyanov, V.V.</creator><creator>Pershenkov, V.S.</creator><creator>Popov, M.Y.</creator><creator>Zebrev, G.I.</creator><general>IEEE</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope><scope>OTOTI</scope></search><sort><creationdate>199612</creationdate><title>The use of conversion model for CMOS IC prediction in space environments</title><author>Shvetzov-Shilovsky, I.N. ; Belyakov, V.V. ; Cherepko, S.V. ; Chumakov, A.I. ; Emelyanov, V.V. ; Pershenkov, V.S. ; Popov, M.Y. ; Zebrev, G.I.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c235t-81b0b7bef2472fb4e0c070338ac00f0a83c1e588697ae6c3a1c4ad9d3fae002f3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1996</creationdate><topic>Annealing</topic><topic>Circuit testing</topic><topic>CMOS integrated circuits</topic><topic>Equations</topic><topic>Extrapolation</topic><topic>INSTRUMENTATION, INCLUDING NUCLEAR AND PARTICLE DETECTORS</topic><topic>Integrated circuit modeling</topic><topic>MATHEMATICAL MODELS</topic><topic>MOSFET</topic><topic>MOSFET circuits</topic><topic>PHYSICAL RADIATION EFFECTS</topic><topic>Predictive models</topic><topic>RADIATION DOSES</topic><topic>Semiconductor device modeling</topic><topic>SENSITIVITY</topic><topic>SPACE FLIGHT</topic><topic>Tunneling</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Shvetzov-Shilovsky, I.N.</creatorcontrib><creatorcontrib>Belyakov, V.V.</creatorcontrib><creatorcontrib>Cherepko, S.V.</creatorcontrib><creatorcontrib>Chumakov, A.I.</creatorcontrib><creatorcontrib>Emelyanov, V.V.</creatorcontrib><creatorcontrib>Pershenkov, V.S.</creatorcontrib><creatorcontrib>Popov, M.Y.</creatorcontrib><creatorcontrib>Zebrev, G.I.</creatorcontrib><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>OSTI.GOV</collection><jtitle>IEEE Transactions on Nuclear Science</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Shvetzov-Shilovsky, I.N.</au><au>Belyakov, V.V.</au><au>Cherepko, S.V.</au><au>Chumakov, A.I.</au><au>Emelyanov, V.V.</au><au>Pershenkov, V.S.</au><au>Popov, M.Y.</au><au>Zebrev, G.I.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>The use of conversion model for CMOS IC prediction in space environments</atitle><jtitle>IEEE Transactions on Nuclear Science</jtitle><stitle>TNS</stitle><date>1996-12</date><risdate>1996</risdate><volume>43</volume><issue>6</issue><spage>3182</spage><epage>3188</epage><pages>3182-3188</pages><issn>0018-9499</issn><eissn>1558-1578</eissn><coden>IETNAE</coden><abstract>A physical model for total dose sensitive MOSFET parameters suitable for extrapolation of laboratory test results to the results expected in space environments is developed. With respect to models based on linear response theory it provides the expansion of properly described time and dose-rate ranges. This model can be shown to be a linear function of one specially built variable thus providing robust parameter fitting and precise extrapolation. The model is used for MOSFET prediction in low dose-rate irradiation environments.</abstract><cop>United States</cop><pub>IEEE</pub><doi>10.1109/23.556923</doi><tpages>7</tpages></addata></record> |
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| source | IEEE Electronic Library (IEL) |
| subjects | Annealing Circuit testing CMOS integrated circuits Equations Extrapolation INSTRUMENTATION, INCLUDING NUCLEAR AND PARTICLE DETECTORS Integrated circuit modeling MATHEMATICAL MODELS MOSFET MOSFET circuits PHYSICAL RADIATION EFFECTS Predictive models RADIATION DOSES Semiconductor device modeling SENSITIVITY SPACE FLIGHT Tunneling |
| title | The use of conversion model for CMOS IC prediction in space environments |
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