The use of conversion model for CMOS IC prediction in space environments

The use of conversion model for CMOS IC prediction in space environments

A physical model for total dose sensitive MOSFET parameters suitable for extrapolation of laboratory test results to the results expected in space environments is developed. With respect to models based on linear response theory it provides the expansion of properly described time and dose-rate rang...

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Veröffentlicht in:IEEE Transactions on Nuclear Science 1996-12, Vol.43 (6), p.3182-3188
Hauptverfasser: Shvetzov-Shilovsky, I.N., Belyakov, V.V., Cherepko, S.V., Chumakov, A.I., Emelyanov, V.V., Pershenkov, V.S., Popov, M.Y., Zebrev, G.I.
Format: Artikel
Sprache:eng
Schlagworte:
Annealing
Circuit testing
CMOS integrated circuits
Equations
Extrapolation
INSTRUMENTATION, INCLUDING NUCLEAR AND PARTICLE DETECTORS
Integrated circuit modeling
MATHEMATICAL MODELS
MOSFET
MOSFET circuits
PHYSICAL RADIATION EFFECTS
Predictive models
RADIATION DOSES
Semiconductor device modeling
SENSITIVITY
SPACE FLIGHT
Tunneling
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Beschreibung
Zusammenfassung:A physical model for total dose sensitive MOSFET parameters suitable for extrapolation of laboratory test results to the results expected in space environments is developed. With respect to models based on linear response theory it provides the expansion of properly described time and dose-rate ranges. This model can be shown to be a linear function of one specially built variable thus providing robust parameter fitting and precise extrapolation. The model is used for MOSFET prediction in low dose-rate irradiation environments.
ISSN:0018-9499
1558-1578
DOI:10.1109/23.556923