SEGR and SEB in n-channel power MOSFETs

SEGR and SEB in n-channel power MOSFETs

For particular bias conditions, it is shown that a device can fail due to either single-event gate rupture (SEGR) or to single-event burnout (SEB). The likelihood of triggering SEGR is shown to be dependent on the ion impact position. Hardening techniques are suggested.

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Bibliographische Detailangaben
Veröffentlicht in:IEEE Transactions on Nuclear Science 1996-12, Vol.43 (6), p.2927-2931
Hauptverfasser: Allenspach, M., Dachs, C., Johnson, G.H., Schrimpf, R.D., Lorfevre, E., Palau, J.M., Brews, J.R., Galloway, K.F., Titus, J.L., Wheatley, C.F.
Format: Artikel
Sprache:eng
Schlagworte:
COMPUTERIZED SIMULATION
Cranes
Degradation
Electric breakdown
FAILURES
Feedback
HEAVY IONS
INSTRUMENTATION, INCLUDING NUCLEAR AND PARTICLE DETECTORS
Military computing
MOSFET
MOSFETs
PHYSICAL RADIATION EFFECTS
Power engineering and energy
Power engineering computing
Radiation hardening
Silicon
SPACE DEPENDENCE
THEORETICAL DATA
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Beschreibung
Zusammenfassung:For particular bias conditions, it is shown that a device can fail due to either single-event gate rupture (SEGR) or to single-event burnout (SEB). The likelihood of triggering SEGR is shown to be dependent on the ion impact position. Hardening techniques are suggested.
ISSN:0018-9499
1558-1578
DOI:10.1109/23.556887