Comparison and implications of charge collection measurements in silicon and InGaAs irradiated by energetic protons and neutrons

Comparison and implications of charge collection measurements in silicon and InGaAs irradiated by energetic protons and neutrons

A variety of charge collection measurements by energetic protons and neutrons have been measured and compared. These include deposition in: small silicon junctions, large volume American and Russian silicon surface barrier detectors, and InGaAs photodiodes.

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Bibliographische Detailangaben
Veröffentlicht in:IEEE Transactions on Nuclear Science 1995-12, Vol.42 (6), p.1815-1822
Hauptverfasser: Normand, E., Oberg, D.L., Wert, J.L., Majewski, P.P., Woffinden, G.A., Satoh, S., Sasaki, K., Tverskoy, M.G., Miroshkin, V.V., Goleminov, N., Wender, S.A., Gavron, A.
Format: Artikel
Sprache:eng
Schlagworte:
CHARGE COLLECTION
Charge measurement
COMPARATIVE EVALUATIONS
Current measurement
Energy measurement
GALLIUM ARSENIDES
INDIUM ARSENIDES
Indium gallium arsenide
INSTRUMENTATION, INCLUDING NUCLEAR AND PARTICLE DETECTORS
Laboratories
NEUTRONS
PHOTODIODES
PHYSICAL RADIATION EFFECTS
PROTONS
SEMICONDUCTOR JUNCTIONS
Silicon
SURFACE BARRIER DETECTORS
Testing
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Beschreibung
Zusammenfassung:A variety of charge collection measurements by energetic protons and neutrons have been measured and compared. These include deposition in: small silicon junctions, large volume American and Russian silicon surface barrier detectors, and InGaAs photodiodes.
ISSN:0018-9499
1558-1578
DOI:10.1109/23.488784