Two parameter model for predicting SEU rate [memory devices]

Two parameter model for predicting SEU rate [memory devices]

Two parameter model (volume and threshold energy) for describing Single Event Upsets (SEU) rate in memory devices is proposed. The method of evaluation of these parameters is discussed. It is shown that there is a good agreement between experimental and calculated data.< >

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Bibliographische Detailangaben
Veröffentlicht in:IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) 1994-12, Vol.41 (6), p.2085-2092
Hauptverfasser: Miroshkin, V.V., Tverskoy, M.G.
Format: Artikel
Sprache:eng
Schlagworte:
COMPARATIVE EVALUATIONS
Data analysis
ERRORS
EVALUATION
INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
MATHEMATICAL MODELS
MEMORY DEVICES
Modems
Nuclear physics
PHYSICAL RADIATION EFFECTS
Predictive models
Projectiles
Protons
Radiation detectors
RADIATION EFFECTS 440200 > Radiation Effects on Instrument Components, Instruments, or Electronic Systems
SEMICONDUCTOR DEVICES
Semiconductor memory
Single event upset
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Beschreibung
Zusammenfassung:Two parameter model (volume and threshold energy) for describing Single Event Upsets (SEU) rate in memory devices is proposed. The method of evaluation of these parameters is discussed. It is shown that there is a good agreement between experimental and calculated data.< >
ISSN:0018-9499
1558-1578
DOI:10.1109/23.340546