Temperature dependence of radiation damage and its annealing in silicon detectors

The radiation damage resulting from the large particle fluences predicted at the Superconducting Super Collider induces significant leakage currents in Si detectors. In order to limit these currents, the detectors are operated at reduced temperatures ( approximately 0 degrees C). Results are present...

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Veröffentlicht in:	IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) 1993-08, Vol.40 (4), p.344-348
Hauptverfasser:	Ziock, H.J., Boissevain, J.G., Holzscheiter, K., Kapustinsky, J.S., Palounek, A.P.T., Sondheim, W.E., Barberis, E., Cartiglia, N., Leslie, J., Pitzl, D., Rowe, W.A., Sadrozinski, H.F.-W., Seiden, A., Spencer, E., Wilder, M., Ellison, J.A., Fleming, J.K., Jerger, S., Joyce, D., Lietzke, C., Reed, E., Wimpenny, S.J., Ferguson, P., Frautschi, M.A., Matthews, J.A.J., Skinner, D.
Format:	Artikel
Sprache:	eng
Schlagworte:	430303 > Particle Accelerators-- Experimental Facilities & Equipment 440104 > Radiation Instrumentation-- High Energy Physics Instrumentation ANNEALING BARYONS Capacitance measurement Capacitance-voltage characteristics CURRENTS DATA ELECTRIC CURRENTS ELEMENTARY PARTICLES EXPERIMENTAL DATA FERMIONS HADRONS HEAT TREATMENTS INFORMATION INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY Leak detection LEAKAGE CURRENT MEASURING INSTRUMENTS NUCLEONS NUMERICAL DATA PARTICLE ACCELERATORS PROTONS RADIATION DETECTORS RADIATION EFFECTS SEMICONDUCTOR DETECTORS SI SEMICONDUCTOR DETECTORS Silicon radiation detectors STORAGE RINGS 440200 > Radiation Effects on Instrument Components, Instruments, or Electronic Systems SUPERCONDUCTING SUPER COLLIDER TEMPERATURE DEPENDENCE Voltage
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Zusammenfassung:	The radiation damage resulting from the large particle fluences predicted at the Superconducting Super Collider induces significant leakage currents in Si detectors. In order to limit these currents, the detectors are operated at reduced temperatures ( approximately 0 degrees C). Results are presented of a study of temperature effects on both the initial radiation damage and the long-term annealing of that damage in Si PIN detectors. Depletion voltage results are reported. The detectors are exposed to approximately 10/sup 14//cm/sup 2/ 650-MeV protons. Very pronounced temperature dependences are observed.< >
ISSN:	0018-9499 1558-1578
DOI:	10.1109/23.256577