Fabrication and total dose testing of a 256 K1 radiation-hardened SRAM

Describes a 256 K*1 radiation-hard SRAM and the process enhancements that resulted in its successful fabrication, and present total-dose-exposure results. Typical measured performance values include an address-activated access time of 36 ns and a write time of 34 ns. Soft-error studies predict the m...

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Veröffentlicht in:	IEEE transactions on nuclear science 1988-12, Vol.35 (6), p.1667-1669
Hauptverfasser:	Kushner, R.A., Kohler, R.A., Steenwyk, S.D., Desko, J.C., Alchesky, L.C., Arnold, R.H., Benevit, C.A., Clemons, D.G., Longfellow, D.A., Lee, K.H., Flores, R.S.
Format:	Artikel
Sprache:	eng
Schlagworte:	CMOS process CMOS technology Fabrication Oxidation Predictive models Random access memory Silicon Surfaces Testing Time measurement
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