Donor/acceptor nature of radiation-induced interface traps

The conductance technique is used to study radiation-induced interface-traps on Sandia Laboratories' radiation-hardened technologies. The density of interface traps, the time constant for interface trap response, and the donor/acceptor nature of the interface traps are investigated. The donor/a...

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Veröffentlicht in:	IEEE transactions on nuclear science 1988-12, Vol.35 (6), p.1154-1159
Hauptverfasser:	McWhorter, P.J., Winokur, P.S., Pastorek, R.A.
Format:	Artikel
Sprache:	eng
Schlagworte:	Annealing Capacitance-voltage characteristics Current measurement Distortion measurement Electron traps Ionizing radiation Laboratories MOS devices Photonic band gap Silicon
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