Donor/acceptor nature of radiation-induced interface traps

Donor/acceptor nature of radiation-induced interface traps

The conductance technique is used to study radiation-induced interface-traps on Sandia Laboratories' radiation-hardened technologies. The density of interface traps, the time constant for interface trap response, and the donor/acceptor nature of the interface traps are investigated. The donor/a...

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Veröffentlicht in:IEEE transactions on nuclear science 1988-12, Vol.35 (6), p.1154-1159
Hauptverfasser: McWhorter, P.J., Winokur, P.S., Pastorek, R.A.
Format: Artikel
Sprache:eng
Schlagworte:
Annealing
Capacitance-voltage characteristics
Current measurement
Distortion measurement
Electron traps
Ionizing radiation
Laboratories
MOS devices
Photonic band gap
Silicon
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Zusammenfassung:The conductance technique is used to study radiation-induced interface-traps on Sandia Laboratories' radiation-hardened technologies. The density of interface traps, the time constant for interface trap response, and the donor/acceptor nature of the interface traps are investigated. The donor/acceptor nature of interface traps is determined by comparing the theoretical and experimental values of the variance in the conductance peak. Results indicate the presence of both donor and acceptor traps in both parts of the bandgap after irradiation.< >
ISSN:0018-9499
1558-1578
DOI:10.1109/23.25433