Donor/acceptor nature of radiation-induced interface traps
The conductance technique is used to study radiation-induced interface-traps on Sandia Laboratories' radiation-hardened technologies. The density of interface traps, the time constant for interface trap response, and the donor/acceptor nature of the interface traps are investigated. The donor/a...
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| Veröffentlicht in: | IEEE transactions on nuclear science 1988-12, Vol.35 (6), p.1154-1159 |
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| container_end_page | 1159 |
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| container_issue | 6 |
| container_start_page | 1154 |
| container_title | IEEE transactions on nuclear science |
| container_volume | 35 |
| creator | McWhorter, P.J. Winokur, P.S. Pastorek, R.A. |
| description | The conductance technique is used to study radiation-induced interface-traps on Sandia Laboratories' radiation-hardened technologies. The density of interface traps, the time constant for interface trap response, and the donor/acceptor nature of the interface traps are investigated. The donor/acceptor nature of interface traps is determined by comparing the theoretical and experimental values of the variance in the conductance peak. Results indicate the presence of both donor and acceptor traps in both parts of the bandgap after irradiation.< > |
| doi_str_mv | 10.1109/23.25433 |
| format | Article |
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The density of interface traps, the time constant for interface trap response, and the donor/acceptor nature of the interface traps are investigated. The donor/acceptor nature of interface traps is determined by comparing the theoretical and experimental values of the variance in the conductance peak. Results indicate the presence of both donor and acceptor traps in both parts of the bandgap after irradiation.< ></description><identifier>ISSN: 0018-9499</identifier><identifier>EISSN: 1558-1578</identifier><identifier>DOI: 10.1109/23.25433</identifier><identifier>CODEN: IETNAE</identifier><language>eng</language><publisher>IEEE</publisher><subject>Annealing ; Capacitance-voltage characteristics ; Current measurement ; Distortion measurement ; Electron traps ; Ionizing radiation ; Laboratories ; MOS devices ; Photonic band gap ; Silicon</subject><ispartof>IEEE transactions on nuclear science, 1988-12, Vol.35 (6), p.1154-1159</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c305t-64af2d2462c3f5f7210c64bc2f501a4bf0fc93faff76e71647d6612f8dd0824e3</citedby><cites>FETCH-LOGICAL-c305t-64af2d2462c3f5f7210c64bc2f501a4bf0fc93faff76e71647d6612f8dd0824e3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/25433$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/25433$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>McWhorter, P.J.</creatorcontrib><creatorcontrib>Winokur, P.S.</creatorcontrib><creatorcontrib>Pastorek, R.A.</creatorcontrib><title>Donor/acceptor nature of radiation-induced interface traps</title><title>IEEE transactions on nuclear science</title><addtitle>TNS</addtitle><description>The conductance technique is used to study radiation-induced interface-traps on Sandia Laboratories' radiation-hardened technologies. The density of interface traps, the time constant for interface trap response, and the donor/acceptor nature of the interface traps are investigated. The donor/acceptor nature of interface traps is determined by comparing the theoretical and experimental values of the variance in the conductance peak. Results indicate the presence of both donor and acceptor traps in both parts of the bandgap after irradiation.< ></description><subject>Annealing</subject><subject>Capacitance-voltage characteristics</subject><subject>Current measurement</subject><subject>Distortion measurement</subject><subject>Electron traps</subject><subject>Ionizing radiation</subject><subject>Laboratories</subject><subject>MOS devices</subject><subject>Photonic band gap</subject><subject>Silicon</subject><issn>0018-9499</issn><issn>1558-1578</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1988</creationdate><recordtype>article</recordtype><recordid>eNqF0DtPwzAUBWALgUQpSKxsmRBLWj8Thw2Vp1SJBWbLte-VjNo42M7Av6cliJXp6Op8usMh5JLRBWO0W3Kx4EoKcURmTCldM9XqYzKjlOm6k113Ss5y_tifUlE1I7f3sY9paZ2DocRU9baMCaqIVbI-2BJiX4fejw58FfoCCa2DqiQ75HNygnab4eI35-T98eFt9VyvX59eVnfr2gmqSt1Ii9xz2XAnUGHLGXWN3DiOijIrN0jRdQItYttAyxrZ-qZhHLX3VHMJYk6up79Dip8j5GJ2ITvYbm0PccyG75XmXP0PpVZKsQO8maBLMecEaIYUdjZ9GUbNYUXDhflZcU-vJhoA4I9N3TcMNmu0</recordid><startdate>19881201</startdate><enddate>19881201</enddate><creator>McWhorter, P.J.</creator><creator>Winokur, P.S.</creator><creator>Pastorek, R.A.</creator><general>IEEE</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>7U5</scope></search><sort><creationdate>19881201</creationdate><title>Donor/acceptor nature of radiation-induced interface traps</title><author>McWhorter, P.J. ; Winokur, P.S. ; Pastorek, R.A.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c305t-64af2d2462c3f5f7210c64bc2f501a4bf0fc93faff76e71647d6612f8dd0824e3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1988</creationdate><topic>Annealing</topic><topic>Capacitance-voltage characteristics</topic><topic>Current measurement</topic><topic>Distortion measurement</topic><topic>Electron traps</topic><topic>Ionizing radiation</topic><topic>Laboratories</topic><topic>MOS devices</topic><topic>Photonic band gap</topic><topic>Silicon</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>McWhorter, P.J.</creatorcontrib><creatorcontrib>Winokur, P.S.</creatorcontrib><creatorcontrib>Pastorek, R.A.</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Solid State and Superconductivity Abstracts</collection><jtitle>IEEE transactions on nuclear science</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>McWhorter, P.J.</au><au>Winokur, P.S.</au><au>Pastorek, R.A.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Donor/acceptor nature of radiation-induced interface traps</atitle><jtitle>IEEE transactions on nuclear science</jtitle><stitle>TNS</stitle><date>1988-12-01</date><risdate>1988</risdate><volume>35</volume><issue>6</issue><spage>1154</spage><epage>1159</epage><pages>1154-1159</pages><issn>0018-9499</issn><eissn>1558-1578</eissn><coden>IETNAE</coden><abstract>The conductance technique is used to study radiation-induced interface-traps on Sandia Laboratories' radiation-hardened technologies. The density of interface traps, the time constant for interface trap response, and the donor/acceptor nature of the interface traps are investigated. The donor/acceptor nature of interface traps is determined by comparing the theoretical and experimental values of the variance in the conductance peak. Results indicate the presence of both donor and acceptor traps in both parts of the bandgap after irradiation.< ></abstract><pub>IEEE</pub><doi>10.1109/23.25433</doi><tpages>6</tpages></addata></record> |
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| ispartof | IEEE transactions on nuclear science, 1988-12, Vol.35 (6), p.1154-1159 |
| issn | 0018-9499 1558-1578 |
| language | eng |
| recordid | cdi_crossref_primary_10_1109_23_25433 |
| source | IEEE Xplore |
| subjects | Annealing Capacitance-voltage characteristics Current measurement Distortion measurement Electron traps Ionizing radiation Laboratories MOS devices Photonic band gap Silicon |
| title | Donor/acceptor nature of radiation-induced interface traps |
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