Total-dose characterization of a high-performance radiation-hardened 1.0- mu m CMOS sea-of-gates technology

Total-dose characterization of a high-performance radiation-hardened 1.0- mu m CMOS sea-of-gates technology

A radiation-hardened CMOS sea-of-gates technology with 1.0- mu m geometry is developed which is fully compatible with commercial technologies. Total-dose and postirradiation effects are investigated in detail on transistors and circuits designed on a 2K-gate test chip. The data show that this techno...

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Veröffentlicht in:IEEE transactions on nuclear science 1990-12, Vol.37 (6), p.2089-2096
Hauptverfasser: Yoshii, I., Hama, K., Maeguchi, K., Takatsuka, S., Hatano, H.
Format: Artikel
Sprache:eng
Schlagworte:
Circuit optimization
Circuit testing
CMOS technology
Fabrication
Integrated circuit technology
Laboratories
Microelectronics
Routing
Semiconductor devices
Very large scale integration
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Beschreibung
Zusammenfassung:A radiation-hardened CMOS sea-of-gates technology with 1.0- mu m geometry is developed which is fully compatible with commercial technologies. Total-dose and postirradiation effects are investigated in detail on transistors and circuits designed on a 2K-gate test chip. The data show that this technology is radiation hardened up to a total dose of 1 Mrad(SiO/sub 2/) and may be functional at 10 Mrad(SiO/sub 2/). Moreover, using a simple analytic model for switching of CMOS circuits, it is shown that the changes in circuit performance are well correlated with those in transistor characteristics.< >
ISSN:0018-9499
1558-1578
DOI:10.1109/23.101232