Millimeter-wave diode-grid frequency doubler

Monolithic diode grid were fabricated on 2-cm/sup 2/ gallium-arsenide wafers in a proof-of-principle test of a quasi-optical varactor millimeter-wave frequency multiplier array concept. An equivalent circuit model based on a transmission-line analysis of plane wave illumination was applied to predic...

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Veröffentlicht in:IEEE transactions on microwave theory and techniques 1988-11, Vol.36 (11), p.1507-1514
Hauptverfasser: Jou, C.F., Lam, W.W., Chen, H.Z., Stolt, K.S., Luhmann, N.C., Rutledge, D.B.
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Sprache:eng
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Zusammenfassung:Monolithic diode grid were fabricated on 2-cm/sup 2/ gallium-arsenide wafers in a proof-of-principle test of a quasi-optical varactor millimeter-wave frequency multiplier array concept. An equivalent circuit model based on a transmission-line analysis of plane wave illumination was applied to predict the array performance. The doubler experiments were performed under far-field illumination conditions. A second-harmonic conversion efficiency of 9.5% and output powers of 0.5 W were achieved at 66 GHz when the diode grid was pumped with a pulsed source at 33 GHz. This grid had 760 Schottky-barrier varactor diodes. The average series resistance was 27 Omega , the minimum capacitance was 18 fF at a reverse breakdown voltage of -3 V. The measurements indicate that the diode grid is a feasible device for generating watt-level powers at millimeter frequencies and that substantial improvement is possible by improving the diode breakdown voltage.< >
ISSN:0018-9480
1557-9670
DOI:10.1109/22.8914