5-100 GHz InP coplanar waveguide MMIC distributed amplifier
A single-stage 5-100-GHz InP MMIC (monolithic microwave integrated circuit) amplifier with an average gain of more than 5.5 dB has been developed. This MMIC distributed amplifier has the highest frequency and bandwidth of operation (5-100 GHz) reported to date for wideband amplifiers. The average as...
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| Veröffentlicht in: | IEEE transactions on microwave theory and techniques 1990-12, Vol.38 (12), p.1986-1993 |
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| container_end_page | 1993 |
|---|---|
| container_issue | 12 |
| container_start_page | 1986 |
| container_title | IEEE transactions on microwave theory and techniques |
| container_volume | 38 |
| creator | Majidi-Ahy, R. Nishimoto, C.K. Riaziat, M. Glenn, M. Silverman, S. Weng, S.-L. Pao, Y.-C. Zdasiuk, G.A. Bandy, S.G. Tan, Z.C.H. |
| description | A single-stage 5-100-GHz InP MMIC (monolithic microwave integrated circuit) amplifier with an average gain of more than 5.5 dB has been developed. This MMIC distributed amplifier has the highest frequency and bandwidth of operation (5-100 GHz) reported to date for wideband amplifiers. The average associated (not optimized) noise figure of the MMIC amplifier was approximately 5.8 dB measured over 4-40 GHz. The active devices in this seven-section distributed amplifier were 0.1- mu m mushroom gate, InGaAs-InAlAs lattice-matched HEMTs (high electron mobility transistors) on a semi-insulating InP substrate. A coplanar waveguide was the transmission medium for this 100-GHz MMIC with an overall chip dimension of 500 mu m by 860 mu m.< > |
| doi_str_mv | 10.1109/22.64584 |
| format | Article |
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This MMIC distributed amplifier has the highest frequency and bandwidth of operation (5-100 GHz) reported to date for wideband amplifiers. The average associated (not optimized) noise figure of the MMIC amplifier was approximately 5.8 dB measured over 4-40 GHz. The active devices in this seven-section distributed amplifier were 0.1- mu m mushroom gate, InGaAs-InAlAs lattice-matched HEMTs (high electron mobility transistors) on a semi-insulating InP substrate. A coplanar waveguide was the transmission medium for this 100-GHz MMIC with an overall chip dimension of 500 mu m by 860 mu m.< ></description><identifier>ISSN: 0018-9480</identifier><identifier>EISSN: 1557-9670</identifier><identifier>DOI: 10.1109/22.64584</identifier><identifier>CODEN: IETMAB</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Broadband amplifiers ; Circuit properties ; Coplanar waveguides ; Distributed amplifiers ; Electric, optical and optoelectronic circuits ; Electronics ; Exact sciences and technology ; HEMTs ; Indium phosphide ; Microwave amplifiers ; Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits ; Microwave integrated circuits ; MMICs ; MODFETs ; Monolithic integrated circuits</subject><ispartof>IEEE transactions on microwave theory and techniques, 1990-12, Vol.38 (12), p.1986-1993</ispartof><rights>1991 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c347t-aef57aa2dbee90076c706cc73da33eb0a2ea5139a6371a02666cf98084ce82063</citedby><cites>FETCH-LOGICAL-c347t-aef57aa2dbee90076c706cc73da33eb0a2ea5139a6371a02666cf98084ce82063</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/64584$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/64584$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=19474667$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Majidi-Ahy, R.</creatorcontrib><creatorcontrib>Nishimoto, C.K.</creatorcontrib><creatorcontrib>Riaziat, M.</creatorcontrib><creatorcontrib>Glenn, M.</creatorcontrib><creatorcontrib>Silverman, S.</creatorcontrib><creatorcontrib>Weng, S.-L.</creatorcontrib><creatorcontrib>Pao, Y.-C.</creatorcontrib><creatorcontrib>Zdasiuk, G.A.</creatorcontrib><creatorcontrib>Bandy, S.G.</creatorcontrib><creatorcontrib>Tan, Z.C.H.</creatorcontrib><title>5-100 GHz InP coplanar waveguide MMIC distributed amplifier</title><title>IEEE transactions on microwave theory and techniques</title><addtitle>TMTT</addtitle><description>A single-stage 5-100-GHz InP MMIC (monolithic microwave integrated circuit) amplifier with an average gain of more than 5.5 dB has been developed. This MMIC distributed amplifier has the highest frequency and bandwidth of operation (5-100 GHz) reported to date for wideband amplifiers. The average associated (not optimized) noise figure of the MMIC amplifier was approximately 5.8 dB measured over 4-40 GHz. The active devices in this seven-section distributed amplifier were 0.1- mu m mushroom gate, InGaAs-InAlAs lattice-matched HEMTs (high electron mobility transistors) on a semi-insulating InP substrate. A coplanar waveguide was the transmission medium for this 100-GHz MMIC with an overall chip dimension of 500 mu m by 860 mu m.< ></description><subject>Applied sciences</subject><subject>Broadband amplifiers</subject><subject>Circuit properties</subject><subject>Coplanar waveguides</subject><subject>Distributed amplifiers</subject><subject>Electric, optical and optoelectronic circuits</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>HEMTs</subject><subject>Indium phosphide</subject><subject>Microwave amplifiers</subject><subject>Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits</subject><subject>Microwave integrated circuits</subject><subject>MMICs</subject><subject>MODFETs</subject><subject>Monolithic integrated circuits</subject><issn>0018-9480</issn><issn>1557-9670</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1990</creationdate><recordtype>article</recordtype><recordid>eNqN0D1LA0EQBuBFFIxRsLW7RrG5OPu9h5UETQIGLbQ-JntzsnL5cPei6K_3NEFLrYZhHl6Gl7FjDgPOobgQYmCUdmqH9bjWNi-MhV3WA-AuL5SDfXaQ0nO3Kg2uxy51zgGy0fgjmyzuM79cNbjAmL3hKz2tQ0XZdDoZZlVIbQyzdUtVhvNVE-pA8ZDt1dgkOtrOPnu8uX4YjvPbu9FkeHWbe6lsmyPV2iKKakZUAFjjLRjvraxQSpoBCkLNZYFGWo4gjDG-Lhw45ckJMLLPzja5q7h8WVNqy3lInpruU1quUymcU0oY_g_IrZRS_A21Nlpq6OD5Bvq4TClSXa5imGN8LzmUX32XQpTffXf0dJuJyWNTR1z4kH59oawyxnbuZOMCEf2cNxmfUeaEIA</recordid><startdate>19901201</startdate><enddate>19901201</enddate><creator>Majidi-Ahy, R.</creator><creator>Nishimoto, C.K.</creator><creator>Riaziat, M.</creator><creator>Glenn, M.</creator><creator>Silverman, S.</creator><creator>Weng, S.-L.</creator><creator>Pao, Y.-C.</creator><creator>Zdasiuk, G.A.</creator><creator>Bandy, S.G.</creator><creator>Tan, Z.C.H.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>7SP</scope><scope>7U5</scope></search><sort><creationdate>19901201</creationdate><title>5-100 GHz InP coplanar waveguide MMIC distributed amplifier</title><author>Majidi-Ahy, R. ; Nishimoto, C.K. ; Riaziat, M. ; Glenn, M. ; Silverman, S. ; Weng, S.-L. ; Pao, Y.-C. ; Zdasiuk, G.A. ; Bandy, S.G. ; Tan, Z.C.H.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c347t-aef57aa2dbee90076c706cc73da33eb0a2ea5139a6371a02666cf98084ce82063</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1990</creationdate><topic>Applied sciences</topic><topic>Broadband amplifiers</topic><topic>Circuit properties</topic><topic>Coplanar waveguides</topic><topic>Distributed amplifiers</topic><topic>Electric, optical and optoelectronic circuits</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>HEMTs</topic><topic>Indium phosphide</topic><topic>Microwave amplifiers</topic><topic>Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits</topic><topic>Microwave integrated circuits</topic><topic>MMICs</topic><topic>MODFETs</topic><topic>Monolithic integrated circuits</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Majidi-Ahy, R.</creatorcontrib><creatorcontrib>Nishimoto, C.K.</creatorcontrib><creatorcontrib>Riaziat, M.</creatorcontrib><creatorcontrib>Glenn, M.</creatorcontrib><creatorcontrib>Silverman, S.</creatorcontrib><creatorcontrib>Weng, S.-L.</creatorcontrib><creatorcontrib>Pao, Y.-C.</creatorcontrib><creatorcontrib>Zdasiuk, G.A.</creatorcontrib><creatorcontrib>Bandy, S.G.</creatorcontrib><creatorcontrib>Tan, Z.C.H.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><jtitle>IEEE transactions on microwave theory and techniques</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Majidi-Ahy, R.</au><au>Nishimoto, C.K.</au><au>Riaziat, M.</au><au>Glenn, M.</au><au>Silverman, S.</au><au>Weng, S.-L.</au><au>Pao, Y.-C.</au><au>Zdasiuk, G.A.</au><au>Bandy, S.G.</au><au>Tan, Z.C.H.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>5-100 GHz InP coplanar waveguide MMIC distributed amplifier</atitle><jtitle>IEEE transactions on microwave theory and techniques</jtitle><stitle>TMTT</stitle><date>1990-12-01</date><risdate>1990</risdate><volume>38</volume><issue>12</issue><spage>1986</spage><epage>1993</epage><pages>1986-1993</pages><issn>0018-9480</issn><eissn>1557-9670</eissn><coden>IETMAB</coden><abstract>A single-stage 5-100-GHz InP MMIC (monolithic microwave integrated circuit) amplifier with an average gain of more than 5.5 dB has been developed. This MMIC distributed amplifier has the highest frequency and bandwidth of operation (5-100 GHz) reported to date for wideband amplifiers. The average associated (not optimized) noise figure of the MMIC amplifier was approximately 5.8 dB measured over 4-40 GHz. The active devices in this seven-section distributed amplifier were 0.1- mu m mushroom gate, InGaAs-InAlAs lattice-matched HEMTs (high electron mobility transistors) on a semi-insulating InP substrate. A coplanar waveguide was the transmission medium for this 100-GHz MMIC with an overall chip dimension of 500 mu m by 860 mu m.< ></abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/22.64584</doi><tpages>8</tpages></addata></record> |
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| ispartof | IEEE transactions on microwave theory and techniques, 1990-12, Vol.38 (12), p.1986-1993 |
| issn | 0018-9480 1557-9670 |
| language | eng |
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| source | IEEE Electronic Library (IEL) |
| subjects | Applied sciences Broadband amplifiers Circuit properties Coplanar waveguides Distributed amplifiers Electric, optical and optoelectronic circuits Electronics Exact sciences and technology HEMTs Indium phosphide Microwave amplifiers Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits Microwave integrated circuits MMICs MODFETs Monolithic integrated circuits |
| title | 5-100 GHz InP coplanar waveguide MMIC distributed amplifier |
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