5-100 GHz InP coplanar waveguide MMIC distributed amplifier

5-100 GHz InP coplanar waveguide MMIC distributed amplifier

A single-stage 5-100-GHz InP MMIC (monolithic microwave integrated circuit) amplifier with an average gain of more than 5.5 dB has been developed. This MMIC distributed amplifier has the highest frequency and bandwidth of operation (5-100 GHz) reported to date for wideband amplifiers. The average as...

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Veröffentlicht in:IEEE transactions on microwave theory and techniques 1990-12, Vol.38 (12), p.1986-1993
Hauptverfasser: Majidi-Ahy, R., Nishimoto, C.K., Riaziat, M., Glenn, M., Silverman, S., Weng, S.-L., Pao, Y.-C., Zdasiuk, G.A., Bandy, S.G., Tan, Z.C.H.
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Broadband amplifiers
Circuit properties
Coplanar waveguides
Distributed amplifiers
Electric, optical and optoelectronic circuits
Electronics
Exact sciences and technology
HEMTs
Indium phosphide
Microwave amplifiers
Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits
Microwave integrated circuits
MMICs
MODFETs
Monolithic integrated circuits
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Zusammenfassung:A single-stage 5-100-GHz InP MMIC (monolithic microwave integrated circuit) amplifier with an average gain of more than 5.5 dB has been developed. This MMIC distributed amplifier has the highest frequency and bandwidth of operation (5-100 GHz) reported to date for wideband amplifiers. The average associated (not optimized) noise figure of the MMIC amplifier was approximately 5.8 dB measured over 4-40 GHz. The active devices in this seven-section distributed amplifier were 0.1- mu m mushroom gate, InGaAs-InAlAs lattice-matched HEMTs (high electron mobility transistors) on a semi-insulating InP substrate. A coplanar waveguide was the transmission medium for this 100-GHz MMIC with an overall chip dimension of 500 mu m by 860 mu m.< >
ISSN:0018-9480
1557-9670
DOI:10.1109/22.64584