MESFET simulation oriented toward computer-aided microwave circuit design

A MESFET simulator designed to link physically based transistor simulation to microwave circuit simulation within an integrated CAD environment is described. The key features of the simulator are efficient implementation of a large-signal time-domain device simulation kernel; incorporation of extens...

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Veröffentlicht in:IEEE transactions on microwave theory and techniques 1990-04, Vol.38 (4), p.426-429
Hauptverfasser: Sandborn, P.A., Blakey, P.A.
Format: Artikel
Sprache:eng
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Zusammenfassung:A MESFET simulator designed to link physically based transistor simulation to microwave circuit simulation within an integrated CAD environment is described. The key features of the simulator are efficient implementation of a large-signal time-domain device simulation kernel; incorporation of extensive postprocessing of raw time-domain data; and an interactive, graphics-oriented user interface. An example that demonstrates the utility of the approach for assessing circuit models is presented.< >
ISSN:0018-9480
1557-9670
DOI:10.1109/22.52584