Pseudomorphic inverted HEMT suitable to low supplied voltage application

Pseudomorphic inverted HEMT suitable to low supplied voltage application

An enhancement-mode pseudomorphic inverted HEMT with short gate length shows superior saturation properties at low drain voltage. Such saturation properties are suitable for low-supplied-voltage applications. High-frequency properties of FETs were also studied, using two types of frequency-dependent...

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Veröffentlicht in:IEEE transactions on microwave theory and techniques 1992-12, Vol.40 (12), p.2381-2386
Hauptverfasser: Kasashima, M., Arai, Y., Fujishiro, H.I., Nakamura, H., Nishi, S.
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Circuit properties
Circuits
Electric, optical and optoelectronic circuits
Electronics
Engineering
Engineering, Electrical & Electronic
Exact sciences and technology
FETs
Frequency measurement
Gallium arsenide
HEMTs
Knee
Low voltage
MESFETs
Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits
Microwave devices
Radio frequency
Science & Technology
Technology
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Beschreibung
Zusammenfassung:An enhancement-mode pseudomorphic inverted HEMT with short gate length shows superior saturation properties at low drain voltage. Such saturation properties are suitable for low-supplied-voltage applications. High-frequency properties of FETs were also studied, using two types of frequency-dependent measurement systems which represent active load and common-source circuits. It was confirmed that low knee voltage in the static I-V curve is preserved above 100 kHz. The estimated output power for the device is 50% higher than that of conventional pseudomorphic HEMT at supplied voltage of 1 V.< >
ISSN:0018-9480
1557-9670
DOI:10.1109/22.179905