Design and performance of low-current GaAs MMICs for L-band front-end applications

Design and performance of low-current GaAs MMICs for L-band front-end applications

GaAs monolithic microwave integrated circuits (MMICs) with very low current and of very small size have been developed for L-band front-end applications. The MMICs fully employ lumped LC elements with uniplanar configurations. There are two kinds of MMICs: a low-noise amplifier and a mixer. The low-...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:IEEE transactions on microwave theory and techniques 1991-02, Vol.39 (2), p.209-215
Hauptverfasser: Imai, Y., Tokumitsu, M., Minakawa, A.
Format: Artikel
Sprache:eng
Schlagworte:
Application specific integrated circuits
Applied sciences
Circuit properties
Electric, optical and optoelectronic circuits
Electronics
Exact sciences and technology
Gain
Gallium arsenide
Local oscillators
Low-noise amplifiers
Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits
Microwave integrated circuits
MMICs
Monolithic integrated circuits
Noise figure
Voltage
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:GaAs monolithic microwave integrated circuits (MMICs) with very low current and of very small size have been developed for L-band front-end applications. The MMICs fully employ lumped LC elements with uniplanar configurations. There are two kinds of MMICs: a low-noise amplifier and a mixer. The low-noise amplifier has a noise figure of 2.5 dB and a gain of 11.5 dB. The mixer has a conversion gain of 12.5 dB small local oscillator (LO) power of -3 dBm. Total current dissipation of the two MMICs is less than 8 mA with 3-V drain bias voltages.< >
ISSN:0018-9480
1557-9670
DOI:10.1109/22.102962