In-plane magnetic anisotropies in polycrystalline Ni films induced by Xe bombardment during growth

In-plane magnetic anisotropies in polycrystalline Ni films induced by Xe bombardment during growth

250 to 1500 AA thin Ni films were ion beam sputtered onto a fused quartz substrate with simultaneous bombardment by Xe ions of 100 eV. Hysteresis loops were recorded ex situ by the longitudinal magnetooptic Kerr effect. A maximum in-plane uniaxial anisotropy field of 12 kA/m (151 Oe) was found in 75...

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Veröffentlicht in:IEEE transactions on magnetics 1992-09, Vol.28 (5), p.2940-2942
Hauptverfasser: Farle, M., Saffari, H., Lewis, W.A., Kay, E., Hagstrom, S.B.
Format: Artikel
Sprache:eng
Schlagworte:
Anisotropic magnetoresistance
Applied sciences
Atomic layer deposition
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Exact sciences and technology
Ion beams
Kerr effect
Magnetic anisotropy
Magnetic films
Magnetic hysteresis
Magnetic properties and materials
Magnetic properties of surface, thin films and multilayers
Magnetooptic effects
Magnetooptic recording
Metals. Metallurgy
Physics
Substrates
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Zusammenfassung:250 to 1500 AA thin Ni films were ion beam sputtered onto a fused quartz substrate with simultaneous bombardment by Xe ions of 100 eV. Hysteresis loops were recorded ex situ by the longitudinal magnetooptic Kerr effect. A maximum in-plane uniaxial anisotropy field of 12 kA/m (151 Oe) was found in 750-AA-thick films that were deposited with a flux ratio of Xe ions to Ni atoms of 0.12. The easy axis of magnetization was found to lie perpendicular to the plane of incidence of the secondary ions. Films showing the strong uniaxial in-plane anisotropy were almost completely
ISSN:0018-9464
1941-0069
DOI:10.1109/20.179679