A new technique to extract channel mobility in submicron MOSFETs using inversion charge slope obtained from measured S-parameters

We present a novel method to extract the effective channel mobility directly from measured S-parameters in submicron MOSFETs. This method is based on the slope extraction of the total gate charge versus mask gate length from measured S-parameters. Unlike conventional approaches, the use of a very lo...

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Veröffentlicht in:IEEE transactions on electron devices 2001-04, Vol.48 (4), p.784-788
Hauptverfasser: Lee, Seonghearn, Yu, Hyun Kyu
Format: Artikel
Sprache:eng
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Zusammenfassung:We present a novel method to extract the effective channel mobility directly from measured S-parameters in submicron MOSFETs. This method is based on the slope extraction of the total gate charge versus mask gate length from measured S-parameters. Unlike conventional approaches, the use of a very long channel test device or the extraction of the parasitic capacitance and effective channel length are not required to extract the mobility in short-channel LDD devices, thus making the new method more accurate and simpler. The validity of the method is demonstrated by comparing the result with those using a previously reported method.
ISSN:0018-9383
1557-9646
DOI:10.1109/16.915726