Analysis of negative differential resistance in the I-V characteristics of shorted-anode LIGBT's
The physical mechanism responsible for the negative differential resistance (NDR) in the current-voltage characteristics of the shorted anode lateral insulated gate bipolar transistor (SA-LIGBT) is explained through two-dimensional numerical simulation. The NDR regime is an inherent feature of all S...
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Veröffentlicht in: | IEEE transactions on electron devices 1991-07, Vol.38 (7), p.1633-1640 |
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Sprache: | eng |
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Zusammenfassung: | The physical mechanism responsible for the negative differential resistance (NDR) in the current-voltage characteristics of the shorted anode lateral insulated gate bipolar transistor (SA-LIGBT) is explained through two-dimensional numerical simulation. The NDR regime is an inherent feature of all SA-LIGBTs, and results from the two different conduction mechanisms responsible for current flow in the device. These conduction mechanisms are minority-carrier injection and majority-carrier flow. Since both the anode geometry and the doping profile control the onset and the degree of minority-carrier injection, the effect these parameters have on the NDR is investigated. A simple lumped-element equivalent model of the SA-LIGBT allows qualitative predictions to be made on how changes in the device geometry and doping profiles influence the NDR regime. It is shown that conductivity modulation is a necessary but not sufficient condition for the occurrence of negative resistance in SA-LIGBT devices. Also required is a large voltage drop in the high-resistivity drift region before conductivity modulation is initiated. This causes small changes in the anode current level, greatly decreasing the total resistance across the drift region.< > |
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ISSN: | 0018-9383 1557-9646 |
DOI: | 10.1109/16.85160 |