Low-temperature polycrystalline silicon thin-film transistors for displays

Polycrystalline silicon thin-film transistors (TFTs) have been fabricated with low-temperature (600 degrees C) oxidized semi-insulating polysilicon (SIPOS) as the gate insulator. Even though no process temperature exceeds 600 degrees C, no threshold drift has been observed. In addition, low threshol...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	IEEE transactions on electron devices 1988-11, Vol.35 (11), p.1842-1845
Hauptverfasser:	Biay-Cheng-Hseih, Hatalis, M.K., Greve, D.W.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Current measurement Display Displays Electronics Exact sciences and technology Glass Hydrogen Insulation Passivation Silicon Temperature Thin film transistors Threshold voltage
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!