Low-temperature polycrystalline silicon thin-film transistors for displays

Low-temperature polycrystalline silicon thin-film transistors for displays

Polycrystalline silicon thin-film transistors (TFTs) have been fabricated with low-temperature (600 degrees C) oxidized semi-insulating polysilicon (SIPOS) as the gate insulator. Even though no process temperature exceeds 600 degrees C, no threshold drift has been observed. In addition, low threshol...

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Veröffentlicht in:IEEE transactions on electron devices 1988-11, Vol.35 (11), p.1842-1845
Hauptverfasser: Biay-Cheng-Hseih, Hatalis, M.K., Greve, D.W.
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Current measurement
Display
Displays
Electronics
Exact sciences and technology
Glass
Hydrogen
Insulation
Passivation
Silicon
Temperature
Thin film transistors
Threshold voltage
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Zusammenfassung:Polycrystalline silicon thin-film transistors (TFTs) have been fabricated with low-temperature (600 degrees C) oxidized semi-insulating polysilicon (SIPOS) as the gate insulator. Even though no process temperature exceeds 600 degrees C, no threshold drift has been observed. In addition, low threshold voltages and effective mobilities as high as 44 cm/sup 2//V.s were measured, and an ON/OFF current ratio >5*10/sup 5/ has been achieved after hydrogen passivation. As a result, these devices are highly suitable for application to flat-panel displays on low-melting-point glass.< >
ISSN:0018-9383
1557-9646
DOI:10.1109/16.7395