A unified current-voltage model for long-channel nMOSFETs
A unified current-voltage model is developed for long-channel nMOSFETs. This model is based on the unified charge control model (UCCM), which agrees very well with quantum-mechanical calculation results assuming two-dimensional electron gas, as well as with experimental capacitance-voltage measureme...
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| Veröffentlicht in: | IEEE transactions on electron devices 1991-02, Vol.38 (2), p.399-406 |
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| container_end_page | 406 |
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| container_issue | 2 |
| container_start_page | 399 |
| container_title | IEEE transactions on electron devices |
| container_volume | 38 |
| creator | Chan-Kwang Park Chang-Yeol Lee Kwyro Lee Byung-Jong Moon Young Hee Byun Shur, M. |
| description | A unified current-voltage model is developed for long-channel nMOSFETs. This model is based on the unified charge control model (UCCM), which agrees very well with quantum-mechanical calculation results assuming two-dimensional electron gas, as well as with experimental capacitance-voltage measurements for the inversion layer formed at the Si-SiO/sub 2/ interface on |
| doi_str_mv | 10.1109/16.69923 |
| format | Article |
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Solid state devices</subject><subject>Silicon</subject><subject>Temperature</subject><subject>Threshold voltage</subject><subject>Transistors</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1991</creationdate><recordtype>article</recordtype><recordid>eNqN0D1PwzAQBmALgUQpSKxsWUAsKb7Y59hjhfiSijoAc-Q4lxKUOsVOkfj3BFLBynS6u0fv8DJ2CnwGwM0VqJkyJhN7bAKIeWqUVPtswjno1AgtDtlRjG_DqqTMJszMk61v6oaqxG1DIN-nH13b2xUl666iNqm7kLSdX6Xu1Xo_HPzj8un25jkes4PatpFOdnPKXobz9X26WN49XM8XqRMC-zQjyMqayEmtnaiURAfa2irPMM9lCY4kgC6VdQpqNKpCxxEJUFdO2jIXU3Yx5m5C976l2BfrJjpqW-up28Yi0zJDwH9AFFxyYwZ4OUIXuhgD1cUmNGsbPgvgxXeJBajip8SBnu8ybXS2rYP1rol_3qBGLfjgzkbXENHve8z4Anhhd2U</recordid><startdate>19910201</startdate><enddate>19910201</enddate><creator>Chan-Kwang Park</creator><creator>Chang-Yeol Lee</creator><creator>Kwyro Lee</creator><creator>Byung-Jong Moon</creator><creator>Young Hee Byun</creator><creator>Shur, M.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>19910201</creationdate><title>A unified current-voltage model for long-channel nMOSFETs</title><author>Chan-Kwang Park ; Chang-Yeol Lee ; Kwyro Lee ; Byung-Jong Moon ; Young Hee Byun ; Shur, M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c335t-2e12bfeec488c3d645c18aad725774b1ce4118b6ac61f596d5c055e158dc4ab73</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1991</creationdate><topic>Applied sciences</topic><topic>Capacitance measurement</topic><topic>Capacitance-voltage characteristics</topic><topic>Circuit simulation</topic><topic>Electronics</topic><topic>Electrons</topic><topic>Exact sciences and technology</topic><topic>Integral equations</topic><topic>Moon</topic><topic>MOSFET circuits</topic><topic>Semiconductor electronics. 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Solid state devices</topic><topic>Silicon</topic><topic>Temperature</topic><topic>Threshold voltage</topic><topic>Transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Chan-Kwang Park</creatorcontrib><creatorcontrib>Chang-Yeol Lee</creatorcontrib><creatorcontrib>Kwyro Lee</creatorcontrib><creatorcontrib>Byung-Jong Moon</creatorcontrib><creatorcontrib>Young Hee Byun</creatorcontrib><creatorcontrib>Shur, M.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Chan-Kwang Park</au><au>Chang-Yeol Lee</au><au>Kwyro Lee</au><au>Byung-Jong Moon</au><au>Young Hee Byun</au><au>Shur, M.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A unified current-voltage model for long-channel nMOSFETs</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>1991-02-01</date><risdate>1991</risdate><volume>38</volume><issue>2</issue><spage>399</spage><epage>406</epage><pages>399-406</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>A unified current-voltage model is developed for long-channel nMOSFETs. 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| identifier | ISSN: 0018-9383 |
| ispartof | IEEE transactions on electron devices, 1991-02, Vol.38 (2), p.399-406 |
| issn | 0018-9383 1557-9646 |
| language | eng |
| recordid | cdi_crossref_primary_10_1109_16_69923 |
| source | IEEE Electronic Library (IEL) |
| subjects | Applied sciences Capacitance measurement Capacitance-voltage characteristics Circuit simulation Electronics Electrons Exact sciences and technology Integral equations Moon MOSFET circuits Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon Temperature Threshold voltage Transistors |
| title | A unified current-voltage model for long-channel nMOSFETs |
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