A unified current-voltage model for long-channel nMOSFETs

A unified current-voltage model for long-channel nMOSFETs

A unified current-voltage model is developed for long-channel nMOSFETs. This model is based on the unified charge control model (UCCM), which agrees very well with quantum-mechanical calculation results assuming two-dimensional electron gas, as well as with experimental capacitance-voltage measureme...

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Veröffentlicht in:IEEE transactions on electron devices 1991-02, Vol.38 (2), p.399-406
Hauptverfasser: Chan-Kwang Park, Chang-Yeol Lee, Kwyro Lee, Byung-Jong Moon, Young Hee Byun, Shur, M.
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Capacitance measurement
Capacitance-voltage characteristics
Circuit simulation
Electronics
Electrons
Exact sciences and technology
Integral equations
Moon
MOSFET circuits
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicon
Temperature
Threshold voltage
Transistors
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Zusammenfassung:A unified current-voltage model is developed for long-channel nMOSFETs. This model is based on the unified charge control model (UCCM), which agrees very well with quantum-mechanical calculation results assuming two-dimensional electron gas, as well as with experimental capacitance-voltage measurements for the inversion layer formed at the Si-SiO/sub 2/ interface on
ISSN:0018-9383
1557-9646
DOI:10.1109/16.69923