The new two-dimensional electron gas base HBT (2DEG-HBT): two-dimensional numerical simulation
The bipolar/FET characteristics of the 2DEG-HBT are analyzed extensively by a two-dimensional numerical simulator based on a drift-diffusion model. For bipolar operations at high collector current densities, it is confirmed that the cutoff frequency f/sub T/ is determined mainly by the collector tra...
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| Veröffentlicht in: | IEEE transactions on electron devices 1991-02, Vol.38 (2), p.222-231 |
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| container_end_page | 231 |
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| container_title | IEEE transactions on electron devices |
| container_volume | 38 |
| creator | Rabinzohn, P.D. Usagawa, T. Mizuta, H. Yamaguchi, K. |
| description | The bipolar/FET characteristics of the 2DEG-HBT are analyzed extensively by a two-dimensional numerical simulator based on a drift-diffusion model. For bipolar operations at high collector current densities, it is confirmed that the cutoff frequency f/sub T/ is determined mainly by the collector transit time of holes and by the charging time of the extrinsic base-collector capacitance C/sub bc//sup EXT/. The charging times of the emitter and base regions and the base transit time are shown to be negligible. A high cutoff frequency F/sub T/ (88 GHz) and current gain h/sub FE/ |
| doi_str_mv | 10.1109/16.69898 |
| format | Article |
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For bipolar operations at high collector current densities, it is confirmed that the cutoff frequency f/sub T/ is determined mainly by the collector transit time of holes and by the charging time of the extrinsic base-collector capacitance C/sub bc//sup EXT/. The charging times of the emitter and base regions and the base transit time are shown to be negligible. A high cutoff frequency F/sub T/ (88 GHz) and current gain h/sub FE/</description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/16.69898</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Analytical models ; Applied sciences ; Capacitance ; Current density ; Cutoff frequency ; Electronics ; Electrons ; Exact sciences and technology ; FETs ; Heterojunction bipolar transistors ; Iron ; Numerical simulation ; Semiconductor electronics. Microelectronics. Optoelectronics. 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For bipolar operations at high collector current densities, it is confirmed that the cutoff frequency f/sub T/ is determined mainly by the collector transit time of holes and by the charging time of the extrinsic base-collector capacitance C/sub bc//sup EXT/. The charging times of the emitter and base regions and the base transit time are shown to be negligible. A high cutoff frequency F/sub T/ (88 GHz) and current gain h/sub FE/</description><subject>Analytical models</subject><subject>Applied sciences</subject><subject>Capacitance</subject><subject>Current density</subject><subject>Cutoff frequency</subject><subject>Electronics</subject><subject>Electrons</subject><subject>Exact sciences and technology</subject><subject>FETs</subject><subject>Heterojunction bipolar transistors</subject><subject>Iron</subject><subject>Numerical simulation</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. 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Microelectronics. Optoelectronics. Solid state devices</topic><topic>Threshold voltage</topic><topic>Transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Rabinzohn, P.D.</creatorcontrib><creatorcontrib>Usagawa, T.</creatorcontrib><creatorcontrib>Mizuta, H.</creatorcontrib><creatorcontrib>Yamaguchi, K.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Rabinzohn, P.D.</au><au>Usagawa, T.</au><au>Mizuta, H.</au><au>Yamaguchi, K.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>The new two-dimensional electron gas base HBT (2DEG-HBT): two-dimensional numerical simulation</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>1991-02-01</date><risdate>1991</risdate><volume>38</volume><issue>2</issue><spage>222</spage><epage>231</epage><pages>222-231</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>The bipolar/FET characteristics of the 2DEG-HBT are analyzed extensively by a two-dimensional numerical simulator based on a drift-diffusion model. For bipolar operations at high collector current densities, it is confirmed that the cutoff frequency f/sub T/ is determined mainly by the collector transit time of holes and by the charging time of the extrinsic base-collector capacitance C/sub bc//sup EXT/. The charging times of the emitter and base regions and the base transit time are shown to be negligible. A high cutoff frequency F/sub T/ (88 GHz) and current gain h/sub FE/</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/16.69898</doi><tpages>10</tpages><oa>free_for_read</oa></addata></record> |
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| identifier | ISSN: 0018-9383 |
| ispartof | IEEE transactions on electron devices, 1991-02, Vol.38 (2), p.222-231 |
| issn | 0018-9383 1557-9646 |
| language | eng |
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| source | IEEE Electronic Library (IEL) |
| subjects | Analytical models Applied sciences Capacitance Current density Cutoff frequency Electronics Electrons Exact sciences and technology FETs Heterojunction bipolar transistors Iron Numerical simulation Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Threshold voltage Transistors |
| title | The new two-dimensional electron gas base HBT (2DEG-HBT): two-dimensional numerical simulation |
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