The new two-dimensional electron gas base HBT (2DEG-HBT): two-dimensional numerical simulation

The new two-dimensional electron gas base HBT (2DEG-HBT): two-dimensional numerical simulation

The bipolar/FET characteristics of the 2DEG-HBT are analyzed extensively by a two-dimensional numerical simulator based on a drift-diffusion model. For bipolar operations at high collector current densities, it is confirmed that the cutoff frequency f/sub T/ is determined mainly by the collector tra...

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Veröffentlicht in:IEEE transactions on electron devices 1991-02, Vol.38 (2), p.222-231
Hauptverfasser: Rabinzohn, P.D., Usagawa, T., Mizuta, H., Yamaguchi, K.
Format: Artikel
Sprache:eng
Schlagworte:
Analytical models
Applied sciences
Capacitance
Current density
Cutoff frequency
Electronics
Electrons
Exact sciences and technology
FETs
Heterojunction bipolar transistors
Iron
Numerical simulation
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Threshold voltage
Transistors
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Beschreibung
Zusammenfassung:The bipolar/FET characteristics of the 2DEG-HBT are analyzed extensively by a two-dimensional numerical simulator based on a drift-diffusion model. For bipolar operations at high collector current densities, it is confirmed that the cutoff frequency f/sub T/ is determined mainly by the collector transit time of holes and by the charging time of the extrinsic base-collector capacitance C/sub bc//sup EXT/. The charging times of the emitter and base regions and the base transit time are shown to be negligible. A high cutoff frequency F/sub T/ (88 GHz) and current gain h/sub FE/
ISSN:0018-9383
1557-9646
DOI:10.1109/16.69898